IS62WV1288BLL-55QLI ISSI, Integrated Silicon Solution Inc, IS62WV1288BLL-55QLI Datasheet - Page 8

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IS62WV1288BLL-55QLI

Manufacturer Part Number
IS62WV1288BLL-55QLI
Description
IC SRAM 1MBIT 55NS 32SOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet

Specifications of IS62WV1288BLL-55QLI

Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
1M (128K x 8)
Speed
55ns
Interface
Parallel
Voltage - Supply
2.5 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
32-SOP
Density
1Mb
Access Time (max)
55ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
3.3V
Address Bus
17b
Package Type
SOP
Operating Temp Range
-40C to 85C
Number Of Ports
1
Supply Current
8mA
Operating Supply Voltage (min)
2.5V
Operating Supply Voltage (max)
3.6V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
32
Word Size
8b
Number Of Words
128K
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IS62WV1288BLL-55QLI
Manufacturer:
TAKAMISAWA/FUJISU
Quantity:
15 000
Part Number:
IS62WV1288BLL-55QLI
Manufacturer:
ISSI
Quantity:
1 000
Part Number:
IS62WV1288BLL-55QLI
Manufacturer:
ISSI
Quantity:
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IS62WV1288ALL, IS62WV1288BLL, IS65WV1288BLL
8
WRITE CYCLE SWITCHING CHARACTERISTICS
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 0.9V/1.5V, input pulse levels of 0.4V to
2. The internal write time is defined by the overlap of CS1 LOW, CS2 HIGH, and WE LOW. All signals must be in valid states to initiate a Write, but any one can
3. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
AC WAVEFORMS
WRITE CYCLE NO. 1 (CS1/CS2 Controlled, OE = HIGH or LOW)
Symbol
ADDRESS
t
t
t
t
t
t
t
t
t
t
V
go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the write.
Wc
scs1/
AW
hA
sA
PWe
sd
hd
hzWe
LzWe
dd
-0.2V/V
(3)
t
(3)
DOUT
scs2
CS1
CS2
DIN
WE
dd
Parameter
Write Cycle Time
CS1/CS2 to Write End
Address Setup Time to Write End
Address Hold from Write End
Address Setup Time
WE Pulse Width
Data Setup to Write End
Data Hold from Write End
WE LOW to High-Z Output
WE HIGH to Low-Z Output
-0.3V and output loading specified in Figure 1.
t
DATA UNDEFINED
SA
Integrated Silicon Solution, Inc. — www.issi.com —
t
Min.
AW
45
35
35
20
35
0
0
5
0
t
45 ns
HZWE
t
t
Max.
SCS2
SCS1
20
t
WC
t
PWE
(1,2)
HIGH-Z
(Over Operating Range)
Min. Max.
45
45
40
25
t
55
0
0
0
5
SD
55 ns
DATA-IN VALID
20
t
HA
t
t
LZWE
HD
Min. Max.
50
30
0
0
0
5
70
60
60
70 ns
20
1-800-379-4774
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
11/12/08
Rev. E

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