IS63LV1024-10J ISSI, Integrated Silicon Solution Inc, IS63LV1024-10J Datasheet - Page 5

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IS63LV1024-10J

Manufacturer Part Number
IS63LV1024-10J
Description
IC SRAM 1MBIT 10NS 32SOJ
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet

Specifications of IS63LV1024-10J

Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
1M (128K x 8)
Speed
10ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
32-SOJ
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

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IS63LV1024
IS63LV1024L
READ CYCLE SWITCHING CHARACTERISTICS
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V
2. Tested with the loading specified in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
AC TEST CONDITIONS
AC TEST LOADS
Figure 1
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. O
07/02/2010
Symbol
t
t
t
t
t
t
t
t
t
t
t
loading specified in Figure 1.
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Levels
Output Load
RC
OHA
DOE
LZOE
HZOE
LZCE
HZCE
PU
PD
AA
ACE
(2)
(2)
OUTPUT
(2)
(2)
Parameter
Read Cycle Time
Address Access Time
Output Hold Time
CE Access Time
OE Access Time
OE to Low-Z Output
OE to High-Z Output
CE to Low-Z Output
CE to High-Z Output
CE to Power Up Time
CE to Power Down Time
Z
OUT
= 50 Ω
See Figures 1 and 2
V
0V to 3.0V
T
= 1.5V
1.5V
Unit
3 ns
50 Ω
Min.
1-800-379-4774
8
2
0
0
3
0
0
-8 ns
(1)
Figure 2
(Over Operating Range)
Max.
8
8
4
4
4
8
OUTPUT
Min.
10
2
0
0
3
0
0
-10 ns
3.3V
Including
Max.
10
10
10
5
5
5
jig and
scope
5 pF
317 Ω
Min.
12
2
0
0
3
0
0
-12 ns
Max.
351 Ω
12
12
12
6
6
6
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
5

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