IS63LV1024-12KL ISSI, Integrated Silicon Solution Inc, IS63LV1024-12KL Datasheet - Page 3

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IS63LV1024-12KL

Manufacturer Part Number
IS63LV1024-12KL
Description
IC SRAM 1MBIT 12NS 32SOJ
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet

Specifications of IS63LV1024-12KL

Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
1M (128K x 8)
Speed
12ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
32-SOJ
Density
1Mb
Access Time (max)
12ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
3.3V
Address Bus
17b
Package Type
SOJ
Operating Temp Range
0C to 70C
Number Of Ports
1
Supply Current
130mA
Operating Supply Voltage (min)
3V
Operating Supply Voltage (max)
3.6V
Operating Temperature Classification
Commercial
Mounting
Surface Mount
Pin Count
32
Word Size
8b
Number Of Words
128K
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

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Part Number
Manufacturer
Quantity
Price
Part Number:
IS63LV1024-12KL
Manufacturer:
ISSI
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Part Number:
IS63LV1024-12KL
Manufacturer:
ISSI
Quantity:
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IS63LV1024-12KL
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IS63LV1024
IS63LV1024L
TRUTH TABLE
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. O
07/02/2010
OPERATING RANGE
DC ELECTRICAL CHARACTERISTICS
Note:
1. V
ABSOLUTE MAXIMUM RATINGS
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a
Mode
Not Selected
(Power-down)
Output Disabled
Read
Write
Range
Commercial
Industrial
Symbol Parameter
V
V
V
V
I
I
V
Symbol
V
T
P
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
LI
LO
IL
IH
STG
OH
OL
IH
IL
TERM
T
(min.) = –0.3V DC; V
(max.) = V
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
DD
Parameter
Terminal Voltage with Respect to GND
Storage Temperature
Power Dissipation
+ 0.3V DC; V
Ambient Temperature
WE
WE
WE
WE
WE
IL
X
H
H
L
–40°C to +85°C
0°C to +70°C
(min.) = –2.0V AC (pulse width under Vss < 5ns). Not 100% tested.
IH
(1)
(max.) = V
CE
CE
CE
CE
CE
H
L
L
L
Test Conditions
V
V
GND ≤ V
GND ≤ V
DD
DD
DD
(1)
OE
OE
OE
OE
OE
= Min., I
= Min., I
+ 2.0V AC (pulse width over V
X
H
X
L
OUT
IN
(Over Operating Range)
≤ V
3.3V ± 0.15V
3.3V ± 0.3V
OH
OL
≤ V
DD
= 8.0 mA
= –4.0 mA
DD
V
1-800-379-4774
DD
, Outputs Disabled
I/O Operation
–0.5 to V
–65 to +150
High-Z
High-Z
D
D
OUT
Value
IN
1.0
DD
DD
+ 0.5
< 5ns). Not 100% tested.
Com.
Com.
Ind.
Ind.
V
DD
I
I
I
I
SB
CC
CC
CC
Current
1
Unit
1
1
1
Min.
–0.3
°C
, I
2.4
2.2
, I
, I
, I
W
V
–1
–5
–1
–5
CC
CC
CC
SB
2
2
2
2
V
DD
Max.
0.4
0.8
1
5
1
5
+ 0.3
Unit
µA
µA
V
V
V
V
3

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