IS42S16100E-6TLI ISSI, Integrated Silicon Solution Inc, IS42S16100E-6TLI Datasheet - Page 31

• Manufacturer Part Number: IS42S16100E-6TLI
• Description: IC SDRAM 16MBIT 166MHZ 50TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS42S16100E-6TLI

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 16M (1M x 16)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 50-TSOPII
• Density: 16Mb
• Address Bus: 12b
• Access Time (max): 6/5.5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 170mA
• Pin Count: 50
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS42S16100E, IS45S16100E
Integrated Silicon Solution, Inc. — www.issi.com
Rev. E
05/18/2010
Interval Between Write and Read Commands
A new read command can be executed while a write cycle
is in progress, i.e., before that cycle completes. Data
corresponding to the new read command is output after
the CAS latency has elapsed from the point the new read
command was executed. The I/On pins must be placed in
the HIGH impedance state at least one cycle before data
is output during this operation.
CAS latency = 3, burstlength = 4
CAS latency = 2, burstlength = 4
COMMAND
COMMAND
CLK
CLK
DQ
DQ
WRITE (CA=A, BANK 0)
WRITE (CA=A, BANK 0)
D
D
WRITE A0 READ B0
WRITE A0 READ B0
IN
IN
A0
A0
t
t
CCD
CCD
READ (CA=B, BANK 0)
READ (CA=B, BANK 0)
HI-Z
D
OUT
HI-Z
B0
The interval (t
one clock cycle.
The selected bank must be set to the active state before
executing this command.
D
D
OUT
OUT
B1
B0
D
D
OUT
OUT
ccD
B2
B1
) between command must be at least
D
D
OUT
OUT
B2
B3
D
OUT
B3
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