IS42S16100E-6TLI ISSI, Integrated Silicon Solution Inc, IS42S16100E-6TLI Datasheet - Page 58

• Manufacturer Part Number: IS42S16100E-6TLI
• Description: IC SDRAM 16MBIT 166MHZ 50TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS42S16100E-6TLI

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 16M (1M x 16)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 50-TSOPII
• Density: 16Mb
• Address Bus: 12b
• Access Time (max): 6/5.5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 170mA
• Pin Count: 50
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS42S16100E, IC42S16100E
Write Cycle / Byte Operation
Note 1: A8,A9 = Don’t Care.
58
CAS latency = 2, burst length = 4
DQ8-15
UDQM
LDQM
DQ0-7
A0-A9
CKE
RAS
CAS
CLK
A10
A11
WE
CS
t
CKS
t
CS
T0
t
t
t
t
t
t
t
CS
CS
CS
AS
AS
t
t
AS
CKA
CH
CK
BANK 1
BANK 0
<
ROW
ROW
T1
ACT
t
CHI
>
t
t
t
t
t
RAS
RC
t
t
t
t
RCD
AH
AH
CH
CH
CH
AH
T2
t
CL
t
t
t
t
DS
DS
CS
CS
AUTO PRE
COLUMN m
<
NO PRE
<
BANK 0
BANK 1
WRITA
WRIT
D
D
T3
IN
IN
m
m
>
>
(1)
t
t
t
DS
t
DH
CH
DH
<
MASKL
D
T4
IN
m+1
>
t
CH
t
DH
<
MASK
T5
>
t
DS
t
DS
Integrated Silicon Solution, Inc. — www.issi.com
D
D
<
IN
IN
ENB
T6
m+3
m+3
>
t
t
DH
DH
t
DPL
BANK 0 AND 1
BANK 0 OR 1
<
<
BANK 1
BANK 0
PALL
PRE
T7
>
>
t
RP
T8
<
BANK 1
BANK 0
ROW
ROW
ACT
T9
>
t
t
RCD
RAS
t
RC
Undefined
Don't Care
T10
01/22/08
Rev. C