IS42S16100E-7BL ISSI, Integrated Silicon Solution Inc, IS42S16100E-7BL Datasheet - Page 30

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IS42S16100E-7BL

Manufacturer Part Number
IS42S16100E-7BL
Description
IC SDRAM 16MBIT 143MHZ 60BGA
Manufacturer
ISSI, Integrated Silicon Solution Inc
Type
SDRAMr
Datasheets

Specifications of IS42S16100E-7BL

Format - Memory
RAM
Memory Type
SDRAM
Memory Size
16M (1M x 16)
Speed
143MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
60-BGA
Organization
1Mx16
Density
16Mb
Address Bus
12b
Access Time (max)
6/5.5ns
Maximum Clock Rate
143MHz
Operating Supply Voltage (typ)
3.3V
Package Type
Mini BGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
130mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Part Number
Manufacturer
Quantity
Price
Part Number:
IS42S16100E-7BL
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
Part Number:
IS42S16100E-7BL-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
Part Number:
IS42S16100E-7BLI
Manufacturer:
TI
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Part Number:
IS42S16100E-7BLI
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
Part Number:
IS42S16100E-7BLI
Manufacturer:
ISSI
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Part Number:
IS42S16100E-7BLI-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
30
IS42S16100E, IS45S16100E
Interval Between Read Command
A new command can be executed while a read cycle is
in progress, i.e., before that cycle completes. When the
second read command is executed, after the CAS latency
has elapsed, data corresponding to the new read command
is output in place of the data due to the previous read
command.
Interval Between Write Command
A new command can be executed while a write cycle is in
progress, i.e., before that cycle completes. At the point the
second write command is executed, data corresponding
to the new write command can be input in place of the
data for the previous write command.
CAS latency = 2, burstlength = 4
CAS latency = 3, burstlength = 4
COMMAND
COMMAND
CLK
DQ
CLK
DQ
READ (CA=A, BANK 0) READ (CA=B, BANK 0)
WRITE (CA=A, BANK 0) WRITE (CA=B, BANK 0)
READ A0
WRITE A0 WRITE B0
D
IN
A0
READ B0
t
CCD
D
IN
t
CCD
B0
D
OUT
D
A0
IN
B1
D
OUT
The interval between two write commands (t
at least one clock cycle.
The selected bank must be set to the active state before
executing this command.
The interval between two read command (t
at least one clock cycle.
The selected bank must be set to the active state before
executing this command.
D
B0
IN
Integrated Silicon Solution, Inc. — www.issi.com
B2
D
OUT
D
B1
IN
B3
D
OUT
B2
D
OUT
B3
ccD
ccD
) must be
) must be
05/18/2010
Rev. E

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