IS42S16400F-6TL-TR ISSI, Integrated Silicon Solution Inc, IS42S16400F-6TL-TR Datasheet - Page 14

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IS42S16400F-6TL-TR

Manufacturer Part Number
IS42S16400F-6TL-TR
Description
IC SDRAM 64MBIT 166MHZ 54TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet

Specifications of IS42S16400F-6TL-TR

Format - Memory
RAM
Memory Type
SDRAM
Memory Size
64M (4M x 16)
Speed
166MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
54-TSOP II
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IS42S16400F
IC42S16400F
OPERATING FREQUENCY / LATENCY RELATIONSHIPS
Note:
1. A minimum setup time t ss + 1CLK must be satisfied.
AC TEST CONDITIONS
Input Load
14
SYMBOL
t
t
t
t
t
t
t
t
t
t
t
t
t
t
OUTPUT
ccD
ckeD
peD
DqD
Dqm
Dqz
DwD
Dal
Dpl
bDl
cDl
rDl
mrD
roh
INPUT
CLK
2.0V
1.4V
0.8V
2.0V
1.4V
0.8V
PARAMETER
Clock Cycle Time
Operating Frequency
READ/WRITE command to READ/WRITE command
CKE to clock disable or power-down entry mode
CKE to clock enable or power-down exit setup mode
DQM to input data delay
DQM to data mask during WRITEs
DQM to data high-impedance during READs
WRITE command to input data delay
Data-in to ACTIVE command
Data-in to PRECHARGE command
Last data-in to burst STOP command
Last data-in to new READ/WRITE command
Last data-in to PRECHARGE command
LOAD MODE REGISTER command
to ACTIVE or REFRESH command
Data-out to high-impedance from
PRECHARGE command
t
OH
t
CS
1.4V
t
CH
t
CHI
(Input/Output Reference Level: 1.4V)
t
AC
t
CK
t
CL
1.4V
CL = 3
CL = 2
Output Load
Integrated Silicon Solution, Inc. — www.issi.com
I/O
166
-6
6
1
1
1
0
0
2
0
5
2
1
1
2
2
3
2
50 pF
143
-7
7
1
1
1
0
0
2
0
5
2
1
1
2
2
3
2
50 Ω
200
-5
5
1
1
1
0
0
2
0
5
2
1
1
2
2
3
2
+1.5V
UNITS
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
MHz
ns
03/19/08
Rev. A

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