IS61WV5128BLL-10KLI-TR ISSI, Integrated Silicon Solution Inc, IS61WV5128BLL-10KLI-TR Datasheet - Page 4
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IS61WV5128BLL-10KLI-TR
Manufacturer Part Number
IS61WV5128BLL-10KLI-TR
Description
IC SRAM 4MBIT 10NS 36SOJ
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet
1.IS61WV5128BLL-10TLI.pdf
(25 pages)
Specifications of IS61WV5128BLL-10KLI-TR
Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
4M (512K x 8)
Speed
10ns
Interface
Parallel
Voltage - Supply
1.65 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
36-SOJ
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IS61WV5128BLL-10KLI-TR
Manufacturer:
ISSI
Quantity:
200
IS61WV5128ALL/ALS, IS61WV5128BLL/BLS
IS64WV5128BLL/BLS
DC ELECTRICAL CHARACTERISTICS
V
Note:
1. V
DC ELECTRICAL CHARACTERISTICS
V
Note:
1. V
DC ELECTRICAL CHARACTERISTICS
V
Note:
1. V
4
DD
DD
DD
Symbol
V
V
V
V
I
I
V
Symbol
V
V
V
V
I
I
V
Symbol
V
V
V
V
I
I
V
lI
lo
lI
lo
lI
lo
Il
Il
Il
Ih
Ih
Ih
oh
ol
Ih
Il
oh
ol
Ih
Il
oh
ol
Ih
Il
(min.) = –0.3V DC; V
(min.) = –0.3V DC; V
= 3.3V + 5%
= 2.4V-3.6V
= 1.65V-2.2V
(min.) = –0.3V DC; V
(1)
(max.) = V
(max.) = V
(max.) = V
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
dd
dd
dd
+ 0.3V dC; V
+ 0.3V dC; V
+ 0.3V dC; V
Il
Il
Il
(min.) = –2.0V AC (pulse width <10 ns). Not 100% tested.
(min.) = –2.0V AC (pulse width <10 ns). Not 100% tested.
(min.) = –2.0V AC (pulse width <10 ns). Not 100% tested.
Ih
Ih
Ih
(max.) = V
(max.) = V
(max.) = V
(1)
(1)
dd
dd
dd
+ 2.0V AC (pulse width <10 ns). Not 100% tested.
+ 2.0V AC (pulse width <10 ns). Not 100% tested.
+ 2.0V AC (pulse width <10 ns). Not 100% tested.
Test Conditions
V
V
GND ≤ V
GND ≤ V
dd
dd
Test Conditions
V
V
GND ≤ V
GND ≤ V
Test Conditions
V
V
GND ≤ V
GND ≤ V
dd
dd
dd
dd
= Min, I
= Min, I
= Min., I
= Min., I
= Min., I
= Min., I
(Over Operating Range)
(Over Operating Range)
(Over Operating Range)
In
out
In
out
oh
ol
≤ V
In
out
≤ V
≤ V
≤ V
= 0.1 mA
= -0.1 mA
oh
ol
oh
ol
≤ V
dd
≤ V
dd
dd
= 8.0 mA
= 1.0 mA
= –4.0 mA
= –1.0 mA
dd
dd
, Outputs Disabled
dd
, Outputs Disabled
, Outputs Disabled
Integrated Silicon Solution, Inc. — www.issi.com
Min.
–0.2
1.4
1.4
–1
–1
—
Min.
–0.3
Min.
–0.3
2.4
1.8
2.0
–1
–1
–1
–1
—
—
2
V
dd
Max.
V
V
0.2
0.4
—
1
1
dd
dd
+ 0.2
Max.
Max.
0.4
0.8
0.4
0.8
—
—
1
1
1
1
+ 0.3
+ 0.3
Unit
Unit
Unit
08/10/09
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
V
V
V
V
V
Rev. I