IS61LV5128AL-10T-TR ISSI, Integrated Silicon Solution Inc, IS61LV5128AL-10T-TR Datasheet - Page 3

• Manufacturer Part Number: IS61LV5128AL-10T-TR
• Description: IC SRAM 4MBIT 10NS 44TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61LV5128AL-10T-TR

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 4M (512K x 8)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 44-TSOP II
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IS61LV5128AL
OPERATING RANGE
CAPACITANCE
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. C
04/15/05
ABSOLUTE MAXIMUM RATINGS
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause perma-
Range
Commercial
Industrial
Symbol
C
C
Symbol
V
T
P
nent damage to the device. This is a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
TERM
STG
T
IN
I/O
Parameter
Terminal Voltage with Respect to GND
Storage Temperature
Power Dissipation
Parameter
Input Capacitance
Input/Output Capacitance
A
(1,2)
= 25°C, f = 1 MHz, V
Ambient Temperature
-40°C to +85°C
0°C to +70°C
DD
= 3.3V.
(1)
3.3V +10%, -5%
3.3V +10%, -5%
Conditions
V
V
OUT
IN
10ns
= 0V
= 0V
1-800-379-4774
–0.5 to V
–65 to +150
Value
1.0
DD
V
DD
+ 0.5
3.3V +10%
3.3V +10%
Max.
6
8
12ns
Unit
°C
W
V
Unit
pF
pF
ISSI
®
3