EC3A03B-TL-H ON Semiconductor, EC3A03B-TL-H Datasheet

EC3A03B-TL-H

Manufacturer Part Number

EC3A03B-TL-H

Description

JFET N-Channel JFET Convs Infrared Sensor Apps

Manufacturer

ON Semiconductor

Datasheet

1.EC3A03B-TL-H.pdf (3 pages)

Specifications of EC3A03B-TL-H

Rohs

yes

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

EC3A03B-TL-H

Manufacturer:

ON Semiconductor

Quantity:

6 400

Current page: 1 of 3
Download datasheet (29Kb)

Ordering number : ENN7295A

Preliminary

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Marking : JV

Drain-to-Source Voltage

Gate-to-Drain Voltage

Gate Current

Drain Current

Allowable Power Dissipation

Junction Temperature

Storage Temperature

Gate-to-Drain Breakdown Voltage

Gate-to-Source Leakage Current

Cutoff Voltage

Zero-Gate Voltage Drain Current

Forward Transfer Admittance

Input Capacitance

Reverse Transfer Capacitance

•

Small I GSS .

Small Ciss.

Ultraminiature package facilitates miniaturization in

end products.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

V (BR)GDS

V GS (off)

Symbol

V DSS

V GDS

I GSS

I DSS

Ciss

Crss

Tstg

P D

yfs

I G

I D

I G =- -10 A, V DS =0

V GS =--20V, V DS =0

V DS =10V, I D =1 A

V DS =10V, V GS =0

V DS =10V, V GS =0, f=1kHz

V DS =10V, V GS =0, f=1MHz

EC3A03B

Conditions

Package Dimensions

unit : mm

2208

Conditions

Infrared Sensor Applications

22503 TS IM TA-100367 / O3002 TS IM TA-100288

0.05

0.15

Impedance Converter,

(Bottom View)

0.35

0.5

0.2

0.6

N-Channel Silicon Junction FET

[EC3A03B]

0.15

0.05

min

0.05

--40

Ratings

1 : Source

2 : Drain

3 : Gate

SANYO : ECSP1006-3

typ

0.13

Ratings

--1.5

1.7

0.7

EC3A03B

--55 to +150

max

--500

--4.0

130

100

150

--40

No.7295-1/3

Unit

Related parts for EC3A03B-TL-H

EC3A03B-TL-H Summary of contents

Page 1

... V DS =10V DSS V DS =10V yfs V DS =10V =0, f=1kHz Ciss V DS =10V =0, f=1MHz Crss V DS =10V =0, f=1MHz 22503 TS IM TA-100367 / O3002 TS IM TA-100288 N-Channel Silicon Junction FET EC3A03B Impedance Converter, [EC3A03B] 0.35 0.2 0.15 0.15 0. 0.05 0.5 (Bottom View Source ...

Page 2

... --2.4 --2.0 --1.6 --1.2 Gate-to-Source Voltage Ciss -- 1 1.0 10 Drain-to-Source Voltage EC3A03B Electrical Connection Polarity mark (Top) Source Drain *Electrodes : Bottom 140 120 100 --0. ITR00837 160 -- =10V 7 I DSS =100 A ...

Page 3

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2003. Specifications and information herein are subject to change without notice. EC3A03B 120 V DS =10V f=1kHz ...

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