IS61LV2568L-10T-TR ISSI, Integrated Silicon Solution Inc, IS61LV2568L-10T-TR Datasheet - Page 6

• Manufacturer Part Number: IS61LV2568L-10T-TR
• Description: IC SRAM 2MBIT 10NS 44TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61LV2568L-10T-TR

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 2M (256K x 8)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 44-TSOP II
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IS61LV2568L
READ CYCLE SWITCHING CHARACTERISTICS
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V
2. Tested with the load in Figure 2. Transition is measured ±200 mV from steady-state voltage. Not 100% tested.
6
Symbol Parameter
t
t
t
t
t
t
t
t
t
and output loading specified in Figure 1.
RC
AA
OHA
ACE
DOE
LZOE
HZOE
LZCE
HZCE
(2)
(2)
(2)
(2)
Read Cycle Time
Address Access Time
Output Hold Time
CE Access Time
OE Access Time
OE to Low-Z Output
OE to High-Z Output
CE to Low-Z Output
CE to High-Z Output
Integrated Silicon Solution, Inc. — www.issi.com —
(1)
Min.
2.5
3.5
(Over Operating Range)
—
—
—
8
0
0
0
- 8 ns
Max
3.5
3.5
3.5
—
—
—
—
8
8
Min.
2.5
10
—
—
—
0
0
3
0
-10 ns
Max.
—
10
—
10
—
—
4
4
4
1-800-379-4774
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
04/28/08
Rev. D