IS42S32200C1-55T-TR ISSI, Integrated Silicon Solution Inc, IS42S32200C1-55T-TR Datasheet - Page 58

• Manufacturer Part Number: IS42S32200C1-55T-TR
• Description: IC SDRAM 64MBIT 183MHZ 86TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS42S32200C1-55T-TR

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 64M (2Mx32)
• Speed: 183MHz
• Interface: Parallel
• Voltage - Supply: 3.15 V ~ 3.45 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 86-TSOPII
• Organization: 2Mx32
• Density: 64Mb
• Address Bus: 13b
• Access Time (max): 7.5/5ns
• Maximum Clock Rate: 183MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Supply Current: 250mA
• Pin Count: 86
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

PACKAGING INFORMATION
Mini Ball Grid Array
Package Code: B (90-Ball)
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. D
07/31/07
A1
mBGA - 8mm x 13mm
Sym. Min.
N0.
Leads
A
A1
D
D1
E
E1
e
M
A
B
C
D
E
G
H
K
N
P
R
F
L
J
SEATING PLANE
1 2 3 4 5 6 7 8 9
12.90
7.90
0.25
—
—
—
—
MILLIMETERS
13.00 13.10
11.20
Typ. Max.
6.40
0.80
8.00
90
—
—
1.45
0.40
8.10
—
—
—
0.508 0.512
0.311 0.315
Min. Typ.
0.01
A
—
—
—
—
INCHES
0.441
0.252
0.031
—
—
0.016
0.516
Max.
0.057
0.319
—
—
—
1-800-379-4774
D
D1
Notes:
1. Controlling dimensions are in millimeters.
2. 0.8 mm Ball Pitch
e
9 8 7 6 5 4 3 2 1
E1
E
ø 0.45 + 0.10/−0.05 (90X)
e
M
C
D
G
H
N
R
A
B
E
F
K
P
J
L