IS61C25616AL-10TLI ISSI, Integrated Silicon Solution Inc, IS61C25616AL-10TLI Datasheet - Page 10
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IS61C25616AL-10TLI
Manufacturer Part Number
IS61C25616AL-10TLI
Description
IC SRAM 4MBIT 10NS 44TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet
1.IS61C25616AS-25TLI.pdf
(17 pages)
Specifications of IS61C25616AL-10TLI
Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
4M (256K x 16)
Speed
10ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
44-TSOP II
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IS61C25616AL-10TLI
Manufacturer:
ISSI
Quantity:
20 000
IS61C25616AL
IS64C25616AL
WRITE CYCLE NO. 3
Notes:
1. The internal write time is defined by the overlap of CE LOW and WE LOW. All signals must be in valid states to initiate a Write,
2. I/O will assume the High-Z state if OE
10
WRITE CYCLE NO. 2
but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling
edge of the signal that terminates the Write.
ADDRESS
ADDRESS
UB, LB
UB, LB
D
D
OUT
WE
D
OE
OUT
CE
WE
D
OE
CE
IN
IN
LOW
LOW
IS61C25616AS
IS64C25616AS
LOW
(OE is LOW During Write Cycle)
(OE is HIGH During Write Cycle)
t
SA
t
DATA UNDEFINED
DATA UNDEFINED
SA
≥
V
IH
.
VALID ADDRESS
t
t
t
t
AW
HZWE
AW
HZWE
VALID ADDRESS
t
t
PWE1
WC
t
t
PWE2
t
WC
t
PBW
PBW
(1)
(1,2)
HIGH-Z
HIGH-Z
t
t
Integrated Silicon Solution, Inc. — www.issi.com
SD
SD
DATA
DATA
IN
IN
VALID
VALID
t
t
HD
HD
t
t
LZWE
LZWE
t
t
HA
HA
UB_CEWR2.eps
UB_CEWR3.eps
03/21/2008
Rev. C