IS61LV12816L-10LQLI ISSI, Integrated Silicon Solution Inc, IS61LV12816L-10LQLI Datasheet - Page 8

IC SRAM 2MBIT 10NS 44LQFP

IS61LV12816L-10LQLI

Manufacturer Part Number
IS61LV12816L-10LQLI
Description
IC SRAM 2MBIT 10NS 44LQFP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet

Specifications of IS61LV12816L-10LQLI

Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
2M (128K x 16)
Speed
10ns
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
44-LQFP
Density
2Mb
Access Time (max)
10ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
3.3V
Address Bus
17b
Package Type
LQFP
Operating Temp Range
-40C to 85C
Number Of Ports
1
Supply Current
65mA
Operating Supply Voltage (min)
3.135V
Operating Supply Voltage (max)
3.6V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
44
Word Size
16b
Number Of Words
128K
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IS61LV12816L-10LQLI
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
Part Number:
IS61LV12816L-10LQLI-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
WRITE CYCLE SWITCHING CHARACTERISTICS
Notes:
IS61LV12816L
8
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0V to
2. The internal write time is defined by the overlap of CE LOW and UB or LB, and WE LOW. All signals must be in valid states
3. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
WC
SCE
AW
HA
SA
SD
HD
HZWE
LZWE
PBW
PWE
PWE
3.0V and output loading specified in Figure 1.
to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced
to the rising or falling edge of the signal that terminates the write.
1
2
(3)
(3)
Parameter
Write Cycle Time
CE to Write End
Address Setup Time
to Write End
Address Hold from Write End
Address Setup Time
LB, UB Valid to End of Write
WE Pulse Width (OE = HIGH)
WE Pulse Width (OE = LOW)
Data Setup to Write End
Data Hold from Write End
WE LOW to High-Z Output
WE HIGH to Low-Z Output
Integrated Silicon Solution, Inc. — www.issi.com —
Min.
6.5
6.5
8
7
7
0
0
6
4
0
0
-8 ns
Max
3
(1,3)
Min. Max.
10
8
8
0
0
7
8
5
0
0
8
-10 ns
(Over Operating Range)
4
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ISSI
1-800-379-4774
10/27/05
Rev. F
®

Related parts for IS61LV12816L-10LQLI