IS43R16800C-5TL ISSI, Integrated Silicon Solution Inc, IS43R16800C-5TL Datasheet - Page 9

• Manufacturer Part Number: IS43R16800C-5TL
• Description: IC DDR SDRAM 128MBIT 66TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS43R16800C-5TL

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOPII
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS43R16800C
IC43R16800C
Integrated Silicon Solution, Inc. — www.issi.com
Rev. A
10/13/08
AC Characteristics (TA = 0 C to +70 C, VDD, VDDQ = 2.5V ± 0.2V, VSS, VSSQ = 0V) [DDR400]
Parameter
Clock cycle time
CK high-level width
CK low-level width
CK half period
DQ output access time from CK, /CK
DQS output access time from CK, /CK
DQS to DQ skew
DQ/DQS output hold time from DQS
Data hold skew factor
Data-out high-impedance time
from CK, /CK
Data-out low-impedance time
from CK, /CK
Read preamble
Read postamble
DQ and DM input setup time
DQ and DM input hold time
DQ and DM input pulse width
Write preamble setup time
Write preamble
Write postamble
Write command to first DQS latching transition tDQSS
DQS falling edge to CK setup time
DQS falling edge hold time from CK
DQS input high pulse width
DQS input low pulse width
Address and control input setup time
Address and control input hold time
Address and control input pulse width
Mode register set command cycle time
Active to Precharge command period
Active to Active/Auto-refresh command period tRC
Auto-refresh to Active/Auto-refresh command
period
Active to Read/Write delay
Precharge to active command period
Active to Autoprecharge delay
Active to active command period
Write recovery time
Auto precharge write recovery and precharge
time
Internal write to Read command delay
Average periodic refresh interval
tREF
Symbol
tCK
tCH
tCL
tHP
tAC
tDQSCK
tDQSQ
tQH
tQHS
tHZ
tLZ
tRPRE
tRPST
tDS
tDH
tDIPW
tWPRES
tWPRE
tWPST
tDSS
tDSH
tDQSH
tDQSL
tIS
tIH
tIPW
tMRD
tRAS
tRFC
tRCD
tRP
tRAP
tRRD
tWR
tDAL
tWTR
-0.7
70
-5
min.
5
0.45
0.45
min
(tCH, tCL)
–0.7
–0.55
—
tHP – tQHS —
—
—
0.9
0.4
0.4
0.4
1.75
0
0.25
0.4
0.72
0.2
0.2
0.35
0.35
0.6
0.6
2.2
2
40
55
15
15
tRCD min.
10
15
(tWR/tCK)+
(tRP/tCK)
2
—
max.
8
0.55
0.55
—
0.7
0.55
0.4
0.5
0.7
0.7
1.1
0.6
—
—
—
—
—
0.6
1.28
—
—
—
—
—
—
—
—
120000
—
—
—
—
—
—
—
—
—
15.6
tCK
Unit
ns
tCK
tCK
ns
ns
ns
ns
ns
ns
ns
tCK
tCK
ns
ns
ns
ns
tCK
tCK
tCK
tCK
tCK
tCK
tCK
ns
ns
ns
tCK
ns
ns
ns
ns
ns
ns
ns
ns
tCK
tCK
µs
Notes
10
2, 11
2, 11
3
5, 11
6, 11
8
8
7
9
8
8
7
13
9