IS42S32200E-6BL ISSI, Integrated Silicon Solution Inc, IS42S32200E-6BL Datasheet - Page 36

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IS42S32200E-6BL

Manufacturer Part Number
IS42S32200E-6BL
Description
IC SDRAM 64MBIT 166MHZ 90BGA
Manufacturer
ISSI, Integrated Silicon Solution Inc
Type
SDRAMr
Datasheets

Specifications of IS42S32200E-6BL

Format - Memory
RAM
Memory Type
SDRAM
Memory Size
64M (2Mx32)
Speed
166MHz
Interface
Parallel
Voltage - Supply
3.15 V ~ 3.45 V
Operating Temperature
0°C ~ 70°C
Package / Case
90-BGA
Organization
2Mx32
Density
64Mb
Address Bus
13b
Access Time (max)
8/5.5ns
Maximum Clock Rate
166MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
160mA
Pin Count
90
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Part Number
Manufacturer
Quantity
Price
Part Number:
IS42S32200E-6BL
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
Part Number:
IS42S32200E-6BL-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
Part Number:
IS42S32200E-6BLI
Manufacturer:
ISSI
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Part Number:
IS42S32200E-6BLI
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
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IS42S32200E-6BLI
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ISSI
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Part Number:
IS42S32200E-6BLI
Quantity:
40
Part Number:
IS42S32200E-6BLI-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
IS42S32200E, IS45S32200E
AC ELECTRICAL CHARACTERISTICS
Notes:
1. An initial pause of 100us is required after power up, followed by two AUTO REFRESH commands, before proper device opera-
2. measured with t
3. The reference level is 1.5V when measuring input signal timing. Rise/fall times are measured between V
4. Access time is measured at 1.5V with the load shown in the figure that follows.
5. The time t
6. CLK must be toggled a minimum of two times during this period.
36
Symbol Parameter
t
t
t
t
t
t
t
t
dpl3
dpl2
dal3
dal2
t
wr
xsr
ref
tion is ensured. (V
AUTO REFRESH command wake-ups should be repeated anytime the t
when the output is in the high impedance state.
Input Data To Precharge
Command Delay time
Input Data To Active / Refresh CAS Latency = 3
Command Delay time (During Auto-Precharge)
Transition Time
Write Recovery Time
Exit Self Refresh to Active Time
Refresh Cycle Time (4096)
hz
(max.) is defined as the time required for the output voltage to transition by ± 200 mV from V
t
= 0.5 ns.
dd
and V
(2)
ddq
must be powered up simultaneously. GND and GNDQ must be at same potential.) The two
(6)
Condition
CAS Latency = 3
CAS Latency = 2
CAS Latency = 2
T
T
T
a
a
a
≤ 70
≤ 85
> 85
o
o
o
C
C
C
Com, Ind, —
Ind,A1,A2 —
(1,2,3)
A1, A2
A2
1CLK+5ns —
2CLK+t
2CLK+t
2CLK
2CLK
Min.
0.3
60
rp
rp
-5
Max.
1.2
64
Integrated Silicon Solution, Inc. — www.issi.com
ref
1CLK+6ns —
2CLK+t
2CLK+t
2CLK
2CLK
Min.
refresh requirement is exceeded.
0.3
66
rp
rp
-6
Max.
1.2
64
64
1CLK+7ns —
2CLK+t
2CLK+t
2CLK
2CLK
Min.
0.3
77
rp
rp
-7
Max.
1.2
64
64
16
ih
oh
1CLK+7.5ns —
(min.) and V
2CLK+t
(min.) or V
2CLK
Min. Max. Units
0.3
75
-75E
rp
1.2
64
64
ol
il
07/12/2010
(max.).
(max.)
ms
ms
ms
t
ns
ns
ns
ns
ns
ns
Rev. D
ck

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