DSL12AW-7 Diodes Inc., DSL12AW-7 Datasheet - Page 3

• Manufacturer Part Number: DSL12AW-7
• Description: Transistors Bipolar - BJT BIPOLAR TRANSISTOR,P PNP,SOT-363,GREEN,3K
• Manufacturer: Diodes Inc.

Specifications of DSL12AW-7

• Rohs: yes
• Transistor Polarity: PNP
• Collector- Emitter Voltage Vceo Max: - 12 V
• Emitter- Base Voltage Vebo: - 5 V
• Dc Collector/base Gain Hfe Min: 100 at - 0.5 A, - 1.5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Continuous Collector Current: - 2 A
• Maximum Power Dissipation: 450 mW
• Minimum Operating Temperature: - 55 C

Electrical Characteristics
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS
DC Current Gain (Note 5)
Collector-Emitter Saturation Voltage (Note 5)
Collector-Emitter Saturation Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn On Voltage
Output Capacitance
Current Gain-Bandwidth Product
Notes:
DSL12AW
Document Number: DS31644 Rev. 2 - 2
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
Fig. 4 Typical Collector Current vs. Collector-Emitter Voltage
0
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
0
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
2
Characteristic
4
6
@T
A
8
= 25°C unless otherwise specified
I = 5mA
I = 4mA
I = 3mA
I = 2mA
I = 1mA
B
B
B
B
B
10
Symbol
V
R
V
BV
BV
BV
V
C
I
I
I
CE(sat)
CE(sat)
BE(sat)
BE(on)
12
h
CBO
CES
EBO
f
FE
obo
CBO
CEO
EBO
T
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3 of 6
Min
100
100
100
-12
-12
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-5
-115
Typ
-8.3
175
165
160
180
-35
-20
-70
-95
⎯
⎯
⎯
⎯
-1
-1
-1
500
450
400
350
300
250
200
150
100
50
0
0.001
Fig. 5 Typical DC Current Gain vs. Collector Current
-0.95
-0.95
-100
-100
-100
-160
-235
-290
Max
300
290
65
⎯
⎯
⎯
⎯
⎯
⎯
T = 125°C
T = 85°C
T = 25°C
T = -55°C
T = 150°C
A
A
A
A
A
I , COLLECTOR CURRENT (A)
C
MHz
Unit
mΩ
mV
nA
nA
nA
pF
V
V
V
V
V
V
0.01
I
I
I
V
V
V
V
V
V
I
I
I
I
I
V
V
V
C
C
E
C
C
C
C
C
CB
CE
EB
CE
CE
CE
CE
CB
CE
= -100μA, I
= -1A, I
= -1A, I
= -1A, I
= -100μA, I
= -10mA, I
= -0.5A, I
= -0.8A, I
= -5V, I
= -1.5V, I
= -1.5V, I
= -1.5V, I
= -1.5V, I
= -12V, I
= -12V, V
= -1.5V, f = 1.0MHz
= -5V, I
B
B
B
= -20mA
= -20mA
= -20mA
C
B
B
C
Test Condition
B
E
= 0
= -10mA
= -16mA
E
C
C
C
C
C
= -100mA, f = 100MHz
0.1
BE
= 0
= 0
= 0
= 0
= -0.5A
= -0.8A
= -1A
= -1A
= 0
V
DSL12AW
CE
© Diodes Incorporated
= -1.5V
February 2011
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