DSS4240Y-7 Diodes Inc., DSS4240Y-7 Datasheet - Page 3

• Manufacturer Part Number: DSS4240Y-7
• Description: Transistors Bipolar - BJT BIPOLAR TRANSISTOR NPN,SOT-363,GREEN,3K
• Manufacturer: Diodes Inc.

Specifications of DSS4240Y-7

• Rohs: yes
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 5 V
• Dc Collector/base Gain Hfe Min: 350 at 100 mA, 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Continuous Collector Current: 2 A
• Maximum Power Dissipation: 625 mW
• Minimum Operating Temperature: - 55 C

Electrical Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain (Note 5)
Collector-Emitter Saturation Voltage (Note 5)
Collector-Emitter Saturation Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn On Voltage
Output Capacitance
Current Gain-Bandwidth Product
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Notes:
DSS4240Y
Document number: DS31682 Rev. 2 - 2
Fig. 4 Typical Collector Current vs. Collector-Emitter Voltage
2.4
2.0
1.6
1.2
0.8
0.4
0
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
0
V , COLLECTOR-EMITTER VOLTAGE (V)
1
CE
Characteristic
2
3
4
5
@T
6
A
= 25°C unless otherwise specified
7
I = 1mA
I = 5mA
I = 4mA
I = 3mA
I = 2mA
B
B
8
B
B
B
9
Symbol
V
R
V
BV
BV
BV
V
C
I
I
CE(sat)
CE(sat)
BE(sat)
BE(on)
h
CBO
10
EBO
t
t
f
on
t
off
t
FE
obo
t
t
CBO
CEO
EBO
T
d
s
r
f
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3 of 5
Min
350
300
300
150
100
40
40
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
5
Typ
150
100
105
190
105
250
315
275
8.5
55
⎯
⎯
⎯
⎯
⎯
⎯
⎯
45
52
⎯
⎯
⎯
64
20
44
40
1,200
1,000
800
600
400
200
0
0.001
Fig. 5 Typical DC Current Gain vs. Collector Current
Max
0.75
100
100
100
180
180
320
200
1.1
T = 150°C
T = 125°C
T = 85°C
T = 25°C
50
70
20
T = -55°C
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
A
A
A
A
A
I , COLLECTOR CURRENT (A)
MHz
Unit
C
mΩ
mV
0.01
nA
μA
nA
pF
⎯
ns
ns
ns
ns
ns
ns
V
V
V
V
V
I
I
I
V
V
V
V
V
V
V
I
I
I
I
I
I
I
V
V
V
V
I
C
C
E
C
C
C
C
C
C
C
C
CB
CB
EB
CE
CE
CE
CE
CE
CB
CE
CC
= 100μA, I
= 1A, I
= 2A, I
= 500mA, I
= 2A, I
= 100μA, I
= 10mA, I
= 100mA, I
= 500mA, I
= 750mA, I
= 1A, I
= 4V, I
= 2V, I
= 2V, I
= 2V, I
= 2V, I
= 2V, I
= 30V, I
= 30V, I
= 10V, f = 1.0MHz
= 10V, I
= 10V
0.1
B
B
B
B1
= 50mA
= 200mA
= 200mA
C
C
C
C
C
C
= -I
Test Condition
B
E
E
C
= 0
E
C
= 100mA
= 500mA
= 1A
= 2A
= 100mA
B
B
B
B
= 0
= 0
= 0, T
= 50mA, f = 100MHz
= 0
= 0
= 1mA
= 50mA
= 15mA
= 50mA
B2
= 50mA
A
1
DSS4240Y
V
= 150°C
CE
© Diodes Incorporated
= -2V
March 2011
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