SBC807-40WT1G ON Semiconductor, SBC807-40WT1G Datasheet

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SBC807-40WT1G

Manufacturer Part Number
SBC807-40WT1G
Description
Transistors Bipolar - BJT SS GP XSTR PNP 45V
Manufacturer
ON Semiconductor
Datasheet

Specifications of SBC807-40WT1G

Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
- 45 V
Collector- Emitter Voltage Vceo Max
- 50 V
Emitter- Base Voltage Vebo
- 5 V
Collector-emitter Saturation Voltage
- 0.7 V
Maximum Dc Collector Current
- 500 mA
Gain Bandwidth Product Ft
100 MHz
Dc Collector/base Gain Hfe Min
250 mA
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SC-70-3
Continuous Collector Current
- 500 mA
Dc Current Gain Hfe Max
600
Maximum Power Dissipation
460 mW
Minimum Operating Temperature
- 55 C
BC807-25W, SBC807-25W,
BC807-40W, SBC807-40W
General Purpose
Transistors
PNP Silicon
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 Board, 1 oz. Cu, 100 mm
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 3
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
Total Device Dissipation FR− 5 Board,
Thermal Resistance,
Junction and Storage Temperature
Site and Control Change Requirements
Compliant
AEC−Q101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
(Note 1) T
Junction−to−Ambient
Characteristic
A
= 25°C
Rating
2
.
Symbol
Symbol
T
V
V
V
R
J
P
, T
CEO
CBO
EBO
I
qJA
C
D
stg
−55 to +150
Value
−500
−5.0
Max
−45
−50
460
272
1
mAdc
°C/W
Unit
Unit
mW
°C
V
V
V
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
ORDERING INFORMATION
5x
M
G
MARKING DIAGRAM
http://onsemi.com
BASE
1
1
= Device Code
= Date Code*
= Pb−Free Package
1
x = B or C
CASE 419
STYLE 3
SC−70
5x M G
COLLECTOR
2
Publication Order Number:
G
EMITTER
3
2
3
BC807−25W/D

Related parts for SBC807-40WT1G

SBC807-40WT1G Summary of contents

Page 1

... BC807-25W, SBC807-25W, BC807-40W, SBC807-40W General Purpose Transistors PNP Silicon Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS ...

Page 2

... Tape and Reel Packaging Specifications Brochure, BRD8011/ 25°C unless otherwise noted.) A Symbol V (BR)CEO V (BR)CES V (BR)EBO I BC807−25, SBC807−25 BC807−40, SBC807−40 V CE(sat) V BE(on) C Specific Marking Package SC−70 5B (Pb−Free) SC−70 5C (Pb−Free) http://onsemi ...

Page 3

... TYPICAL CHARACTERISTICS − BC807−25W, SBC807−25W 500 150°C 400 25°C 300 200 −55°C 100 0 0.001 0. COLLECTOR CURRENT (A) C Figure 1. DC Current Gain vs. Collector Current 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 0. COLLECTOR CURRENT (A) C Figure 3. Base Emitter Saturation Voltage vs. Collector Current ...

Page 4

... TYPICAL CHARACTERISTICS − BC807−25W, SBC807−25W -1.0 -0.8 -0.6 -0 -0.01 +1.0 q for V VC CE(sat) 0 -1.0 q for -2.0 -1.0 -10 -100 I , COLLECTOR CURRENT C Figure 7. Temperature Coefficients T = 25° -500 -300 -100 mA C -0.1 -1.0 - BASE CURRENT (mA) B Figure 6. Saturation Region 100 10 1.0 -1000 -0 ...

Page 5

... TYPICAL CHARACTERISTICS − BC807−40W, SBC807−40W 1000 900 800 150°C 700 600 500 25°C 400 300 −55°C 200 100 0 0.001 0. COLLECTOR CURRENT (A) C Figure 9. DC Current Gain vs. Collector Current 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 0. COLLECTOR CURRENT (A) C Figure 11. Base Emitter Saturation Voltage vs. ...

Page 6

... TYPICAL CHARACTERISTICS − BC807−40W, SBC807−40W -1.0 -0.8 -0.6 -0 -0.01 +1.0 q for V VC CE(sat) 0 -1.0 q for -2.0 -1.0 -10 -100 I , COLLECTOR CURRENT C Figure 15. Temperature Coefficients T = 25° -500 -300 -100 mA C -0.1 -1.0 - BASE CURRENT (mA) B Figure 14. Saturation Region 100 10 1.0 -1000 -0 ...

Page 7

... TYPICAL CHARACTERISTICS − BC807−25W, SBC807−25W, BC807−40W, SBC807−40W 1 0.1 0.01 0.001 0.1 1000 D = 0.5 100 0.2 0.1 0.05 10 0.02 0.01 Single Pulse 1 0.000001 0.00001 0.0001 100 Thermal Limit COLLECTOR EMITTER VOLTAGE (V) CE Figure 17. Safe Operating Area 0.001 0.01 0.1 t, PULSE TIME (s) Figure 18. Thermal Response http://onsemi.com ...

Page 8

... A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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