IS42S32200E-6TL ISSI, Integrated Silicon Solution Inc, IS42S32200E-6TL Datasheet - Page 13

• Manufacturer Part Number: IS42S32200E-6TL
• Description: IC SDRAM 64MBIT 166MHZ 86TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS42S32200E-6TL

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 64M (2Mx32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 3.15 V ~ 3.45 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 86-TSOPII
• Organization: 2Mx32
• Density: 64Mb
• Address Bus: 13b
• Access Time (max): 8/5.5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 160mA
• Pin Count: 86
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Data Bus Width: 32 bit
• Maximum Clock Frequency: 166 MHz
• Access Time: 8 ns, 5.5 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 3 V
• Maximum Operating Current: 160 mA
• Maximum Operating Temperature: + 70 C
• Minimum Operating Temperature: 0 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS42S32200E, IS45S32200E
FUNCTIONAL DESCRIPTION
The 64Mb SDRAMs 512K x 32 x 4 banks) are quad-bank
DRAMs which operate at 3.3V and include a synchronous
interface (all signals are registered on the positive edge of
the clock signal, CLK). Each of the 16,777,216-bit banks is
organized as 2,048 rows by 256 columns by 32bits.
Read and write accesses to the SDRAM are burst oriented;
accesses start at a selected location and continue for
a programmed number of locations in a programmed
sequence. Accesses begin with the registration of an AC-
TIVE command which is then followed by a READ orWRITE
command.The address bits registered coincident with the
ACTIVE command are used to select the bank and row to
be accessed (BA0 and BA1 select the bank, A0-A10 select the
row).The address bits (A0-A7) registered coincident with the
READ or WRITE command are used to select the starting
column location for the burst access.
Prior to normal operation, the SDRAM must be initial-
ized. The following sections provide detailed information
covering device initialization, register definition, command
descriptions and device operation.
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
07/12/2010
Initialization
SDRAMs must be powered up and initialized in a
predefined manner.
The 64M SDRAM is initialized after the power is applied to
V
A 100µs delay is required prior to issuing any command
other than a COMMAND INHIBIT or a NOP.The COMMAND
INHIBIT or NOP may be applied during the 100us period and
continue should at least through the end of the period.
With at least one COMMAND INHIBIT or NOP command
having been applied, a PRECHARGE command should
be applied once the 100µs delay has been satisfied. All
banks must be precharged. This will leave all banks
in an idle idle state where two AUTO REFRESH cycles
must be performed. After the AUTO REFRESH cycles are
complete, the SRDRAM is then ready for mode register
programming.
The mode register should be loaded prior to applying
any operational command because it will power up in an
unknown state.
dd
and V
ddq
(simultaneously) and the clock is stable.
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