IS42S32200E-6TL ISSI, Integrated Silicon Solution Inc, IS42S32200E-6TL Datasheet - Page 47

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IS42S32200E-6TL

Manufacturer Part Number
IS42S32200E-6TL
Description
IC SDRAM 64MBIT 166MHZ 86TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Type
SDRAMr
Datasheets

Specifications of IS42S32200E-6TL

Format - Memory
RAM
Memory Type
SDRAM
Memory Size
64M (2Mx32)
Speed
166MHz
Interface
Parallel
Voltage - Supply
3.15 V ~ 3.45 V
Operating Temperature
0°C ~ 70°C
Package / Case
86-TSOPII
Organization
2Mx32
Density
64Mb
Address Bus
13b
Access Time (max)
8/5.5ns
Maximum Clock Rate
166MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
160mA
Pin Count
86
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Data Bus Width
32 bit
Maximum Clock Frequency
166 MHz
Access Time
8 ns, 5.5 ns
Supply Voltage (max)
3.6 V
Supply Voltage (min)
3 V
Maximum Operating Current
160 mA
Maximum Operating Temperature
+ 70 C
Minimum Operating Temperature
0 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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IS42S32200E
ALTERNATING BANK READ ACCESSES
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. 00D
06/02/08
DQM0-DQM3
COMMAND
BA0, BA1
A0-A9
CKE
CLK
A10
DQ
t
t
CKS
CMS
t
t
t
BANK 0
AS
AS
AS
ACTIVE
ROW
ROW
T0
t
CKH
t
t
t
t
CMH
AH
AH
AH
t
t
t
t
RCD
RRD
RAS
RC
t
- BANK 0
CK
- BANK 0
- BANK 0
ENABLE AUTO PRECHARGE
T1
NOP
t
t
CMS
CL
COLUMN m
BANK 0
READ
T2
t
CMH
t
CH
CAS Latency - BANK 0
T3
NOP
t
LZ
t
AC
1-800-379-4774
BANK 3
ACTIVE
ROW
ROW
T4
D
OUT
t
OH
m
t
AC
t
RCD
- BANK 3
ENABLE AUTO PRECHARGE
T5
D
NOP
OUT
t
OH
m+
t
1
AC
COLUMN b
BANK 3
READ
T6
D
OUT
t
OH
m+
t
(2)
RP
t
2
AC
CAS Latency - BANK 3
- BANK 0
T7
D
NOP
OUT
t
OH
m+
t
3
AC
ACTIVE
BANK 0
ROW
T8
ROW
DON'T CARE
D
OUT
t
OH
b
t
RCD
t
AC
- BANK 0
47

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