IS61LV12816L-10TI ISSI, Integrated Silicon Solution Inc, IS61LV12816L-10TI Datasheet - Page 15
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IS61LV12816L-10TI
Manufacturer Part Number
IS61LV12816L-10TI
Description
IC SRAM 2MBIT 10NS 44TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet
1.IS61LV12816L-10TL.pdf
(16 pages)
Specifications of IS61LV12816L-10TI
Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
2M (128K x 16)
Speed
10ns
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
44-TSOP II
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
PACKAGING INFORMATION
Mini Ball Grid Array
Package Code: B (48-pin)
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. D
01/15/03
mBGA - 6mm x 8mm
Sym.
N0.
Leads
A
A1
A2
D
D1
E
E1
e
b
D
A2
Min. Typ. Max.
0.60
7.90
5.90
0.30 0.35 0.40
0.24
MILLIMETERS
—
5.25 BSC
3.75 BSC
0.75 BSC
G
A
B
C
D
E
H
F
48
—
—
—
—
—
1.20
0.30
8.10
6.10
—
1
SEATING PLANE
Top View
2
3
0.009
0.024
0.311
0.232
0.012 0.014 0.016
E
Min. Typ. Max.
—
4
0.148 BSC
0.030 BSC
INCHES
0.207 BSC
5 6
—
—
—
—
—
0.047
0.012
0.319
0.240
—
A1
1-800-379-4774
A
D1
mBGA - 8mm x 10mm
Sym.
N0.
Leads
A
A1
A2
D
D1
E
E1
e
b
e
Min. Typ. Max.
Notes:
1. Controlling dimensions are in millimeters.
0.60
9.90
7.90
0.30 0.35 0.40
0.24
—
MILLIMETER
5.25 BSC
3.75 BSC
0.75 BSC
6
—
—
—
—
—
48
Bottom View
5
10.10
4
1.20
0.30
8.10
E1
—
3
2
φ b (48x)
ISSI
0.009
0.024
0.390
0.311
0.012 0.014 0.016
e
Min. Typ. Max.
—
1
0.148 BSC
0.030 BSC
INCHES
0.207 BSC
—
—
—
—
—
G
A
B
C
D
E
F
H
0.047
0.012
0.398
0.319
—
®