IS41LV16100B-60KL-TR ISSI, Integrated Silicon Solution Inc, IS41LV16100B-60KL-TR Datasheet - Page 18

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IS41LV16100B-60KL-TR

Manufacturer Part Number
IS41LV16100B-60KL-TR
Description
IC DRAM 16MBIT 60NS 42SOJ
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet

Specifications of IS41LV16100B-60KL-TR

Format - Memory
RAM
Memory Type
DRAM - EDO
Memory Size
16M (1M x 16)
Speed
60ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
42-SOJ
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
CBR
CBR
IS41LV16100B
CBR
CBR
CBR REFRESH CYCLE
HIDDEN REFRESH CYCLE
Notes:
1. A Hidden Refresh may also be performed after a Write Cycle. In this case, WE = LOW and OE = HIGH.
2. t
18
OFF
is referenced from rising edge of RAS or CAS, whichever occurs last.
UCAS/LCAS
UCAS/LCAS
ADDRESS
RAS
RAS
OE
I/O
I/O
t
t
t
ASR
CRP
RPC
t
CP
(Addresses; WE, OE = DON'T CARE)
Row
(1)
t
RP
(WE = HIGH; OE = LOW)
t
CHR
t
t
RAH
RAD
t
RCD
Open
t
CSR
t
t
ASC
RAS
Integrated Silicon Solution, Inc. — www.issi.com —
t
t
AR
RAS
t
Column
CLZ
t
RAC
t
t
RPC
RAL
t
OE
t
AA
t
CAC
Open
t
CAH
t
RSH
t
t
ORD
RP
t
RP
t
Valid Data
CSR
t
RAS
t
CHR
t
RAS
t
OFF
t
CHR
(2)
Undefined
Don’t Care
ISSI
1-800-379-4774
Open
t
OD
12/11/06
Rev. C
®

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