2N4401-T Rectron, 2N4401-T Datasheet - Page 2

• Manufacturer Part Number: 2N4401-T
• Description: Transistors Bipolar - BJT NPN 0.6A 40V Gen Pur
• Manufacturer: Rectron

Specifications of 2N4401-T

• Product Category: Transistors Bipolar - BJT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 60 V
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 0.95 V
• Collector-emitter Saturation Voltage: 40 V
• Maximum Dc Collector Current: 0.6 A
• Gain Bandwidth Product Ft: 250 MHz
• Dc Collector/base Gain Hfe Min: 20
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92
• Continuous Collector Current: 0.6 A
• Dc Current Gain Hfe Max: 300
• Maximum Power Dissipation: 600 mW
• Minimum Operating Temperature: - 55 C
• Factory Pack Quantity: 2000

SMALL-SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
Note : Pulse Test: Pulse Width < 300ms,Duty Cycle < 2.0%
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS(1)
Storage Time
Delay Time
Rise Time
Current-Gain-Bandwidth Product (I C = 20mAdc, V CE = 10Vdc, f= 100MHz)
Output Capacitance (V CB = 5.0Vdc, I E = 0, f= 1.0MHz)
Input Capacitance (V EB = 0.5Vdc, I C = 0, f= 1.0MHz)
Input lmpedance (V CE = 10Vdc, I C = 1.0mAdc, f= 1.0kHz)
Voltage Feedback Ratio (V CE = 10Vdc, I C = 1.0mAdc, f= 1.0kHz)
Small-Signal Current Gain (V CE = 10Vdc, I C = 1.0mAdc, f= 1.0kHz)
Output Admittance (V CE = 10Vdc, I C = 1.0mAdc, f= 1.0kHz)
Collector-Emitter Breakdown Voltage(1) (I C = 1.0 mAdc, I B = 0)
Collector-Base Breakdown Voltage (I C = 0.1uAdc, I E = 0)
Emitter-Base Breakdown Voltage (I E = 0.1uAdc, I C = 0)
Base Cutoff Current (V CE = 35Vdc, V BE(off) = 0.4Vdc)
Collector Cutoff Current (V CE = 35Vdc, V EB = 0.4Vdc)
DC Current Gain (I C = 0.1mAdc, V CE = 1.0Vdc)
Collector-Emitter Saturation Voltage (1) (I C = 150mAdc, I B = 15mAdc)
Base-Emitter Saturation Voltage (1) (I C = 150mAdc, I B = 15mAdc)
Fall Time
(V CC = 30Vdc, I C = 150mAdc, I B1 = I B2 = 15mAdc)
(V CC = 30Vdc, V EB = 2.0Vdc, I C = 150mAdc, I B1 = 15mAdc)
(I C = 500mAdc, V CE = 2.0Vdc)
(I C = 1.0mAdc, V CE = 1.0Vdc)
(I C = 10mAdc, V CE = 1.0Vdc)
(I C = 150mAdc, V CE = 1.0Vdc)
-
Chatacteristic
(I C = 500mAdc, I B = 50mAdc)
(I C = 500mAdc, I B = 50mAdc)
(@TA=25
-
O
C unless otherwise noted)
V (BR)CEO
V (BR)CBO
V (BR)EBO
Symbol
V CE(sat)
V BE(sat)
I CEX
I BEV
C eb
h oe
hFE
C cb
h ie
h re
h fe
f T
t d
t s
t r
t f
Min
0.75
250
40
100
1.0
0.1
1.0
6.0
40
60
20
40
80
40
-
-
-
-
-
-
-
-
-
-
-
Max
0.75
0.95
300
500
225
6.5
30
8.0
0.1
0.1
0.4
1.2
15
30
15
20
30
-
-
-
-
-
-
-
-
kohms
X 10 -
umhos
Unit
uAdc
uAdc
MHz
Vdc
Vdc
Vdc
Vdc
Vdc
pF
pF
ns
ns
-
-
4