IS61LV12816L-10LQI ISSI, Integrated Silicon Solution Inc, IS61LV12816L-10LQI Datasheet - Page 7
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IS61LV12816L-10LQI
Manufacturer Part Number
IS61LV12816L-10LQI
Description
IC SRAM 2MBIT 10NS 44LQFP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet
1.IS61LV12816L-10TL.pdf
(16 pages)
Specifications of IS61LV12816L-10LQI
Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
2M (128K x 16)
Speed
10ns
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
44-LQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IS61LV12816L-10LQI
Manufacturer:
ISSI
Quantity:
647
Company:
Part Number:
IS61LV12816L-10LQI
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
Company:
Part Number:
IS61LV12816L-10LQI-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
IS61LV12816L
Notes:
1. WE is HIGH for a Read Cycle.
2. The device is continuously selected. OE, CE, UB, or LB = V
3. Address is valid prior to or coincident with CE LOW transition.
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. F
10/27/05
READ CYCLE NO. 2
AC WAVEFORMS
READ CYCLE NO. 1
ADDRESS
ADDRESS
D
LB, UB
OUT
D
OUT
OE
CE
HIGH-Z
t
LZCE
PREVIOUS DATA VALID
(1,2)
(1,3)
t
LZB
(Address Controlled) (CE = OE = V
t
AA
t
DOE
t
t
t
LZOE
ACE
BA
t
OHA
t
RC
IL
1-800-379-4774
.
t
AA
t
RC
DATA VALID
IL
, UB or LB = V
t
DATA VALID
HZCE
IL
)
t
OHA
t
t
t
OHA
HZB
HZOE
READ1.eps
UB_CEDR2.eps
ISSI
®
7