2SB1203T-TL-E ON Semiconductor, 2SB1203T-TL-E Datasheet - Page 3

• Manufacturer Part Number: 2SB1203T-TL-E
• Description: Transistors Bipolar - BJT BIP PNP 5A 50V
• Manufacturer: ON Semiconductor

Specifications of 2SB1203T-TL-E

• Rohs: yes
• Transistor Polarity: NPN/PNP
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: - 6 V
• Dc Collector/base Gain Hfe Min: 70 mA
• Mounting Style: Through Hole
• Package / Case: TO-252
• Continuous Collector Current: 5 A
• Maximum Power Dissipation: 1 W

1000
100
--5
--4
--3
--2
--1
--5
--4
--3
--2
--1
--6
--5
--4
--3
--2
--1
10
0
0
0
7
5
3
2
7
5
3
2
0
0
0
5
2SB1203
From top
--100mA
--90mA
--80mA
--70mA
--60mA
7
--0.01
--0.2
Collector-to-Emitter Voltage, V CE -- V
Collector-to-Emitter Voltage, V CE -- V
--0.4
2
--2
Base-to-Emitter Voltage, V BE -- V
3
Collector Current, I C -- A
5
--0.4
7
--0.1
--0.8
--4
h FE -- I C
I C -- V BE
I C -- V CE
I C -- V CE
--0.6
2
3
--1.2
--6
5 7
--0.8
--1.0
--1.6
2
--8
2SB1203
V CE = --2V
2SB1203
V CE = --2V
--1.0
I B =0
I B =0
2SB1203
3
2SB1203/2SD1803
ITR09180
ITR09182
ITR09184
ITR09186
5 7
--2.0
--1.2
--10
--10
1000
100
10
5
4
3
2
1
0
5
4
3
2
1
0
6
5
4
3
2
1
0
7
5
3
2
7
5
3
2
0
0
0
5
2SD1803
From top
50mA
45mA
40mA
35mA
30mA
7
0.01
0.2
Collector-to-Emitter Voltage, V CE -- V
Collector-to-Emitter Voltage, V CE -- V
2
0.4
Base-to-Emitter Voltage, V BE -- V
2
3
Collector Current, I C -- A
5
0.4
7
0.1
0.8
h FE -- I C
I C -- V CE
I C -- V BE
I C -- V CE
4
2
0.6
3
1.2
6
5 7
0.8
1.0
I B =0
I B =0
1.6
2
8
2SD1803
V CE =2V
1.0
2SD1803
V CE =2V
No.2085-3/10
2SD1803
3
ITR09181
ITR09183
ITR09185
ITR09187
5 7
2.0
1.2
10
10