MT46H16M16LFBF-5:H Micron Technology Inc, MT46H16M16LFBF-5:H Datasheet - Page 45
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MT46H16M16LFBF-5:H
Manufacturer Part Number
MT46H16M16LFBF-5:H
Description
IC DDR SDRAM 256MBIT 60VFBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT46H16M16LFBF-5H.pdf
(96 pages)
Specifications of MT46H16M16LFBF-5:H
Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
256M (16Mx16)
Speed
200MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
0°C ~ 70°C
Package / Case
60-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT46H16M16LFBF-5:H
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Company:
Part Number:
MT46H16M16LFBF-5:H TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
State Diagram
Figure 14: Simplified State Diagram
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. H 11/09 EN
ACT = ACTIVE
AREF = AUTO REFRESH
BST = BURST TERMINATE
CKEH = Exit power-down
CKEL = Enter power-down
DPD = Enter deep power-down
applied
Power
WRITE
LMR
PRE
PREALL
Power
PRE
EMR
LMR
WRITE A
on
WRITING
WRITING
power-
Active
down
DPDX = Exit deep power-down
EMR = LOAD EXTENDED MODE REGISTER
LMR = LOAD MODE REGISTER
PRE = PRECHARGE
PREALL = PRECHARGE all banks
READ = READ w/o auto precharge
DPDX
WRITE
LMR
CKEL
power-
down
Deep
WRITE A
WRITE A
CKEH
PRE
DPD
Precharging
precharged
all banks
active
45
Row
Idle:
ACT
PRE
SREF
READ A
WRITE
READ
256Mb: x16, x32 Mobile LPDDR SDRAM
CKEH
refresh
READ A
PRE
Self
SREFX
Micron Technology, Inc. reserves the right to change products or specifications without notice.
SRR
CKEL
READ
Precharge
AREF
power-
down
terminate
READING
READING
BST
Burst
SRR
READ A
READ A = READ w/ auto precharge
SREF = Enter self refresh
SREFX = Exit self refresh
SRR = STATUS REGISTER READ
WRITE = WRITE w/o auto precharge
WRITE A = WRITE w/ auto precharge
refresh
Automatic sequence
Command sequence
Auto
READ
READ
©2008 Micron Technology, Inc. All rights reserved.
READ
State Diagram