BC848BW-G Comchip Technology, BC848BW-G Datasheet - Page 2

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BC848BW-G

Manufacturer Part Number
BC848BW-G
Description
Transistors Bipolar - BJT 30V, .1A
Manufacturer
Comchip Technology
Datasheet

Specifications of BC848BW-G

Rohs
yes
QW-BTR35
Electrical Characteristics
(BC846AW-G Thru. BC848CW-G, @T
Small Signal Transistor
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Break Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Noise Figure
Transition Frequency
Collector Output Capacitance
Parameter
BC846AW,847AW,848AW
BC846BW,847BW,848BW
BC847CW,848CW
BC846AW,847AW,848AW
BC846BW,847BW,848BW
BC847CW,848CW
BC846AW,847AW,848AW
BC846BW,847BW,848BW
BC847CW,848CW
BC846W-G, BC847W-G
BC846W-G
BC847W-G
BC848W-G
BC846W-G
BC846W-G
BC848W-G
BC848W-G
Comchip Technology CO., LTD.
A
= 25 C unless otherwise specified)
Symbol
V
V
V
V
V
V
BE(on)
I
CE(sat)
BE(sat)
h
C
NF
CBO
CBO
CEO
EBO
f
FE
T
ob
O
BW=200Hz
I
I
I
V
V
V
I
I
I
I
V
V
V
f=100MH
V
V
f =1KH
C
C
C
C
E
C
C
CB
CE
CE
CE
CE
CE
CB
CE
=10mA , I
=100mA , I
Test Conditions
=10μA , I
=10mA , I
=10μA , I
=10mA , I
=100mA , I
=30V
=5V , I
=5V , I
=5V , I
=5V , I
=5V , I
=10V , f=1MH
=5V , I
Z
Z
, R
C
C
C
C
C
C
E
C
S
=10mA
B
B
B
=10μA
=2mA
=2mA
=10mA
=0.2mA
=0
=0
B
=2K
B
=0.5mA
=0
=0.5mA
=0.5mA
=5mA
Ω
Z
MIN
110
200
420
580
100
80
50
30
65
45
30
6
5
TYP
150
270
660
0.7
0.9
90
MAX
0.25
0.60
220
450
800
700
770
4.5
15
10
4
Units
MH
Page 2
mV
nA
pF
dB
V
V
V
V
V
REV:A
Z

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