MT48H8M32LFB5-6:H TR Micron Technology Inc, MT48H8M32LFB5-6:H TR Datasheet - Page 81
MT48H8M32LFB5-6:H TR
Manufacturer Part Number
MT48H8M32LFB5-6:H TR
Description
IC SDRAM 256MBIT 166MHZ 90VFBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT48H8M32LFB5-6H.pdf
(86 pages)
Specifications of MT48H8M32LFB5-6:H TR
Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
256M (8Mx32)
Speed
166MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
0°C ~ 70°C
Package / Case
90-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
- Current page: 81 of 86
- Download datasheet (3Mb)
Deep Power-Down
PDF: 09005aef834c13d2
256mb_mobile_sdram_y36n.pdf - Rev. I 11/09 EN
Deep power-down mode is a maximum power-saving feature achieved by shutting off
the power to the entire device memory array. Data on the memory array will not be re-
tained after deep power-down mode is executed. Deep power-down mode is entered by
having all banks idle, with CS# and WE# held LOW with RAS# and CAS# HIGH at the
rising edge of the clock, while CKE is LOW. CKE must be held LOW during deep power-
down.
To exit deep power-down mode, CKE must be asserted HIGH. Upon exiting deep power-
down mode, a full initialization sequence is required.
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
81
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©2008 Micron Technology, Inc. All rights reserved.
Deep Power-Down
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