IS42S81600E-7TL-TR ISSI, Integrated Silicon Solution Inc, IS42S81600E-7TL-TR Datasheet - Page 34

• Manufacturer Part Number: IS42S81600E-7TL-TR
• Description: IC SDRAM 128MBIT 143MHZ 54TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS42S81600E-7TL-TR

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 128M (16M x 8)
• Speed: 143MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-TSOP II
• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 14b
• Access Time (max): 6.5/5.4ns
• Maximum Clock Rate: 143MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 130mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS42S81600E, IS42S16800E
34
Notes:
1) CAS latency = 2, Burst Length = 4
2) x16: A9 and A11 = "Don't Care"
ALTERNATING BANK READ ACCESSES
x8: A11 = "Don't Care"
DQML, DQMH
COMMAND
A0-A9, A11
BA0, BA1
DQM/
CKE
CLK
A10
DQ
t
t
CKS
CMS
t
t
t
BANK 0
AS
AS
AS
ACTIVE
ROW
ROW
T0
t
CKH
t
t
t
t
AH
AH
AH
CMH
t
t
t
t
RCD
RRD
RAS
RC
t
- BANK 0
CK
- BANK 0
- BANK 0
ENABLE AUTO PRECHARGE
T1
NOP
t
t
CMS
CL
COLUMN m
BANK 0
READ
T2
t
CMH
t
CH
(2)
CAS Latency - BANK 0
T3
NOP
t
LZ
t
AC
BANK 3
ACTIVE
ROW
ROW
T4
Integrated Silicon Solution, Inc. — www.issi.com
D
OUT
t
OH
m
t
AC
t
RCD
- BANK 3
ENABLE AUTO PRECHARGE
T5
D
NOP
OUT
t
OH
m+
t
1
AC
COLUMN b
BANK 3
READ
T6
D
OUT
t
OH
m+
t
(2)
RP
t
2
AC
CAS Latency - BANK 3
- BANK 0
T7
D
NOP
OUT
t
OH
m+
t
3
AC
BANK 0
ACTIVE
ROW
T8
ROW
DON'T CARE
D
03/16/2011
OUT
t
OH
b
t
Rev. D
RCD
t
AC
- BANK 0