MJD350-13 Diodes Inc., MJD350-13 Datasheet - Page 2

• Manufacturer Part Number: MJD350-13
• Description: Transistors Bipolar - BJT HIGH VOLTAGE PNP SMT
• Manufacturer: Diodes Inc.

Specifications of MJD350-13

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 300 V
• Collector- Emitter Voltage Vceo Max: 300 V
• Emitter- Base Voltage Vebo: 3 V
• Maximum Dc Collector Current: 0.5 A
• Dc Collector/base Gain Hfe Min: 30 at 50 mA at 10 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: DPAK
• Dc Current Gain Hfe Max: 30 at 50 mA at 10 V
• Maximum Power Dissipation: 1560 mW
• Minimum Operating Temperature: - 55 C
• Factory Pack Quantity: 2500

MJD350
Document number: DS31608 Rev. 2 - 2
1,000
100
2.0
1.5
1.0
0.5
1.2
1.0
0.8
0.6
0.4
0.2
10
0
1
0
Fig. 3 Typical DC Current Gain vs. Collector Current
0
0.1
0.1
T = 85°C
T = -55°C
T = 25°C
T = 150°C
A
A
A
T = -55°C
A
T = 25°C
A
A
V
Fig. 5 Typical Base-Emitter Turn-On Voltage
CE
R
= -10V
25
θJA
T , AMBIENT TEMPERATURE ( C)
-I , COLLECTOR CURRENT (mA)
vs. Ambient Temperature (Note 3)
-I , COLLECTOR CURRENT (mA)
A
C
1
C
= 81°C/W
1
T = 150°C
Fig. 1 Power Dissipation
A
T = 85°C
A
vs. Collector Current
50
10
10
75
100
100
100
V
1,000
CE
°
125
= -10V
10,000
1,000
150
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0.001
0.01
0.01
1.2
1.0
0.8
0.6
0.4
0.2
0.1
10
0.1
1
0
1
0.1
0.1
0.1
T = 25°C
T = 85°C
T = -55°C
T = 150°C
A
A
Fig. 4 Typical Collector-Emitter Saturation Voltage
A
A
Fig. 6 Typical Base-Emitter Saturation Voltage
-V , COLLECTOR-EMITTER VOLTAGE (V)
I /I = 10
I
CE
C B
C B
/I
-I , COLLECTOR CURRENT (mA)
vs. Collector-Emitter Voltage (Note 3)
C
-I , COLLECTOR CURRENT (mA)
= 10
C
Fig. 2 Typical Collector Current
1
1
1
vs. Collector Current
vs. Collector Current
T = 85°C
10
10
A
10
DC
T = 150°C
A
Pw = -100ms
T = -55°C
A
100
100
100
Pw = -10ms
T = 25°C
A
© Diodes Incorporated
November 2008
MJD350
1,000
1,000
1,000