BC807-T Rectron, BC807-T Datasheet

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BC807-T

Manufacturer Part Number
BC807-T
Description
Transistors Bipolar - BJT PNP 0.8A 45V Gen Pur
Manufacturer
Rectron
Datasheet

Specifications of BC807-T

Product Category
Transistors Bipolar - BJT
Rohs
yes
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
45 V
Collector- Emitter Voltage Vceo Max
50 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
50 V
Dc Collector/base Gain Hfe Min
40
Mounting Style
SMD/SMT
Package / Case
SOT-23
Dc Current Gain Hfe Max
600
Maximum Power Dissipation
250 mW
Factory Pack Quantity
3000
SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 – MARCH 2001
PARTMARKING DETAILS
COMPLEMENTARY TYPE
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
*Measured under pulsed conditions.
Spice parameter data is available upon request for these devices
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Peak Base Current
Power Dissipation at T
Operating and Storage Temperature Range
PARAMETER
Collector Cut-Off
Current
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
All bands
Transition Frequency
Output Capacitance
BC80716 –
BC80725 –
BC80740 –
BC80716
BC80725
BC80740
5AZ
5BZ
5CZ
amb
SYMBOL
I
V
V
h
f
C
CBO
EBO
T
=25°C
FE
CE(sat)
BE(on)
obo
BC817
MIN.
100
160
250
40
TYP.
100
8.0
amb
tba
= 25°C unless otherwise stated).
MAX. UNIT CONDITIONS.
-0.1
-0.5
-10
-700
-1.2
250
400
600
SYMBOL
V
V
V
I
I
I
I
P
T
CM
C
B
BM
tot
j
CBO
CEO
EBO
:T
mV
V
MHz
pF
stg
A
A
V
V
V
I
I
I
I
I
I
I
f=35MHz
V
C
C
C
C
C
C
C
CB
CB
EB
CB
=-500mA, I
=-500mA, V
=-100mA, V
=-100mA, V
=-100mA, V
=-500mA, V
=-10mA, V
=-20V, I
=-20V, I
=-5V, I
=-10V f=1MHz
-55 to +150
VALUE
-500
-100
-200
C
330
-50
-45
-5
-1
C
BC807
=0
E
E
=0
=0, T
CE
B
CE
CE
CE
CE
CE
SOT23
=-50mA*
=-5V
=-1V*
=-1V*
=-1V*
=-1V*
=-1V*
amb
=150°C
UNIT
mW
mA
mA
mA
B
°C
A
V
V
V
E

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