IS42S16800D-75ETLI-TR ISSI, Integrated Silicon Solution Inc, IS42S16800D-75ETLI-TR Datasheet - Page 18

• Manufacturer Part Number: IS42S16800D-75ETLI-TR
• Description: IC SDRAM 128MBIT 133MHZ 54TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS42S16800D-75ETLI-TR

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 54-TSOP II
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS42S81600D,
OPERATING FREQUENCY / LATENCY RELATIONSHIPS
18
SYMBOL PARAMETER
—
—
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
RCD
RC
RRD
CCD
RQL
QMD
CAC
RAC
RAS
RP
DPL
DAL
RBD
WBD
WDL
PQL
DMD
MRD
Clock Cycle Time
Operating Frequency (CAS Latency = 3)
CAS Latency
Active Command To Read/Write Command Delay Time
RAS Latency (t
Command Period (REF to REF / ACT to ACT)
Command Period (ACT to PRE)
Command Period (PRE to ACT)
Command Period (ACT[0] to ACT [1])
Column Command Delay Time
(READ, READA, WRIT, WRITA)
Input Data To Precharge Command Delay Time
Input Data To Active/Refresh Command Delay Time
(During Auto-Precharge)
Burst Stop Command To Output in HIGH-Z Delay Time
(Read)
Burst Stop Command To Input in Invalid Delay Time
(Write)
Precharge Command To Output in HIGH-Z Delay Time
(Read)
Precharge Command To Input in Invalid Delay Time
(Write)
Last Output To Auto-Precharge Start Time (Read)
DQM To Output Delay Time (Read)
DQM To Input Delay Time (Write)
Mode Register Set To Command Delay Time
IS42S16800D
RCD
+ t
CAC
)
CAS Latency = 3
CAS Latency = 3
CAS Latency = 3
CAS Latency = 3
Integrated Silicon Solution, Inc. — www.issi.com
166
10
-2
6
3
3
6
7
3
2
1
2
5
3
0
3
0
2
0
2
143
10
–2
7
3
3
6
7
3
2
1
2
5
3
0
3
0
2
0
2
133
7.5
10
-2
3
3
6
7
3
2
1
2
5
3
0
3
0
2
0
2
UNITS
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
MHz
ns
07/28/08
Rev. E