PN2222A-T Rectron, PN2222A-T Datasheet - Page 2

• Manufacturer Part Number: PN2222A-T
• Description: Transistors Bipolar - BJT NPN 1A 40V Gen Pur
• Manufacturer: Rectron

Specifications of PN2222A-T

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 75 V
• Collector- Emitter Voltage Vceo Max: 40 V
• Collector-emitter Saturation Voltage: 40 V
• Mounting Style: Through Hole
• Package / Case: TO-92
• Continuous Collector Current: 0.6 A
• Maximum Power Dissipation: 0.5 W
• Factory Pack Quantity: 2000

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL-SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
NOTES : 1. Pulse Test: Pulse Width < 300ms,Duty Cycle < 2.0%
Storage Time
Delay Time
Rise Time
Collector-Emitter Breakdown Voltage (I C = 10mAdc, I B = 0)
Collector-Base Breakdown Voltage (I C = 10u Adc, I E = 0)
Emitter-Base Breakdown Voltage (I E = 10u Adc, I C = 0)
Collector Cutoff Current (V CE = 60Vdc,V EB(off) = 3.0Vdc
Collector Cutoff Current (V CB = 60Vdc, I E = 0)
Emitter Cutoff Current (V EB = 3.0Vdc, I C = 0)
Base Cutoff Current (V CE = 60Vdc, V EB(off) = 3.0Vdc
DC Current Gain (I C = 10mAdc, V CE = 10Vdc, TA= -55
Collector-Emitter Saturation Voltage (1) (I C = 150mAdc, I B = 15mAdc)
Base-Emitter Saturation Voltage (1) (I C = 150mAdc, I B = 15mAdc)
Current-Gain-Bandwidth Product (2) (I C = 20mAdc, V CE = 20Vdc, f= 100MHz)
Input Capacitance (V EB =0.5Vdc, I C = 0, f= 1.0MHz)
Input Impedance (I C = 1.0mAdc, V CE =10Vdc, f=1.0kHz)
Voltage Feedback Ratio (I C = 1.0mAdc, V CE = 10Vdc, f= 1.0kHz)
Small-Signal Current Gain (I C = 1.0mAdc, V CE = 10Vdc, f= 1.0kHz)
Output Admittance (I C = 1.0mAdc, V CE = 10Vdc, f= 1.0kHz)
Collector Base Time Constant (I E = 20mAdc, V CB = 20Vdc, f= 31.8MHz)
Noise Figure (I C = 100u Adc, V CE = 10Vdc, R S = 1.0kohms
Fall Time
2. f
T
is defined as the frequency at which |h fe | extrapolates to unity
(I C = 10mAdc, V CE =10Vdc, f=1.0kHz)
(V CC = 30Vdc, I C = 150mAdc, I B1 = I B2 = 15mAdc)
(I C = 500mAdc, V CE = 10Vdc) (1)
(V CC = 30Vdc, V BE(off) = -0.5Vdc, I C = 150mAdc, I B1 = 15mAdc)
(I C = 10mAdc, V CE = 10Vdc, f= 1.0kHz)
(V CB = 60Vdc, I E = 0, TA= 150
(I C = 10mAdc, V CE =10Vdc, f= 1.0kHz)
(I C = 10mAdc, V CE = 10Vdc, f= 1.0kHz)
-
Chatacteristic
(I C = 500mAdc, I B = 50mAdc)
(I C = 500mAdc, I B = 50mAdc)
(@TA=25
-
O
O
C unless otherwise noted)
O
C)
C)
, f= 1.0kHz)
V (BR)CEO
V (BR)CBO
V (BR)EBO
Symbol
V CE(sat)
V BE(sat)
I CBO
I EBO
rb,Cc
I CEX
C ibo
hFE
h oe
I BL
h ie
h re
h fe
NF
f T
t d
t s
t r
t f
Min
0.25
0.6
300
2.0
5.0
40
75
6.0
35
40
50
75
25
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
1.25
0.01
300
375
200
150
225
0.3
1.0
1.2
2.0
8.0
8.0
4.0
4.0
0.01
0.01
25
35
10
25
60
10
20
-
-
-
-
-
-
X 10 -
umhos
kohms
Unit
uAdc
uAdc
uAdc
nAdc
MHz
Vdc
Vdc
Vdc
Vdc
Vdc
pF
dB
ps
ns
ns
-
-
4