TIP30C-S Bourns, TIP30C-S Datasheet - Page 3

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TIP30C-S

Manufacturer Part Number
TIP30C-S
Description
Transistors Bipolar - BJT 100V 1A PNP
Manufacturer
Bourns
Datasheet

Specifications of TIP30C-S

Product Category
Transistors Bipolar - BJT
Rohs
yes
Factory Pack Quantity
1000
JULY 1968 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
R O D U C T
1000
100
10
-0·001
1
V
T
t
C
CE
p
= 300 µs, duty cycle < 2%
= 25°C
= -4 V
TYPICAL DC CURRENT GAIN
COLLECTOR CURRENT
I
C
-0·01
- Collector Current - A
I N F O R M A T I O N
Figure 1.
vs
-1·0
-0·9
-0·8
-0·7
-0·6
-0·5
-0·01
-0·1
V
T
TYPICAL CHARACTERISTICS
CE
C
= 25°C
= -4 V
BASE-EMITTER VOLTAGE
TCS632AD
COLLECTOR CURRENT
I
C
-1·0
- Collector Current - A
Figure 3.
-0·1
vs
-0·01
COLLECTOR-EMITTER SATURATION VOLTAGE
-1·0
-0·1
-10
-0·1
PNP SILICON POWER TRANSISTORS
TCS632AF
-1·0
TIP30, TIP30A,TIP30B, TIP30C
I
BASE CURRENT
B
-1·0
- Base Current - mA
Figure 2.
vs
-10
-100
I
I
I
C
C
C
= -100 mA
= -300 mA
= -1 A
TCS632AE
-1000
3

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