IS45S32200E-6TLA1 ISSI, Integrated Silicon Solution Inc, IS45S32200E-6TLA1 Datasheet - Page 35

• Manufacturer Part Number: IS45S32200E-6TLA1
• Description: IC SDRAM 64MBIT 166MHZ 86TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS45S32200E-6TLA1

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 64M (2Mx32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 86-TSOPII
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS45S32200E
Integrated Silicon Solution, Inc. — www.issi.com
Rev. A
02/07/08
AC ELECTRICAL CHARACTERISTICS
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
CK3
CK2
AC3
AC2
CH
CL
OH
LZ
HZ3
HZ2
DS
DH
AH
CKS
CKH
CKA
CS
CH
RC
RAS
RP
RCD
RRD
AS
Parameter
Clock Cycle Time
Access Time From CLK
CLK HIGH Level Width
CLK LOW Level Width
Output Data Hold Time
Output LOW Impedance Time
Output HIGH Impedance Time
Input Data Setup Time
Input Data Hold Time
Address Setup Time
Address Hold Time
CKE Setup Time
CKE Hold Time
CKE to CLK Recovery Delay Time
Command Setup Time (CS, RAS, CAS, WE, DQM)
Command Hold Time (CS, RAS, CAS, WE, DQM)
Command Period (REF to REF / ACT to ACT)
Command Period (ACT to PRE)
Command Period (PRE to ACT)
Active Command To Read / Write Command Delay Time
Command Period (ACT [0] to ACT[1])
(4)
(5)
Condition
CAS Latency = 3
CAS Latency = 2
CAS Latency = 3
CAS Latency = 2
CAS Latency = 3
CAS Latency = 2
(1,2,3)
1CLK+3
Min.
38.7
1.5
0.8
1.5
0.8
0.8
1.5
0.8
10
—
—
—
—
60
18
18
12
6
2
2
2
0
1
-6
Max.
120K
5.5
7.5
5.5
7.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1CLK+3
Min.
38.7
2.5
2.5
2.5
1.5
0.8
1.5
0.8
0.8
10
63
20
20
14
—
—
—
—
7 —
0
1
2
1
-7
Max.
120K
5.5
5.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
8
8
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
35