BC807-16 T/R NXP Semiconductors, BC807-16 T/R Datasheet - Page 6
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BC807-16 T/R
Manufacturer Part Number
BC807-16 T/R
Description
Transistors Bipolar - BJT TRANS GP TAPE-7
Manufacturer
NXP Semiconductors
Datasheet
1.BC807-16_TR.pdf
(19 pages)
Specifications of BC807-16 T/R
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
50 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
80 MHz
Dc Collector/base Gain Hfe Min
100 at 100 mA at 1 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Continuous Collector Current
0.5 A
Maximum Power Dissipation
250 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
3000
Part # Aliases
BC807-16,215
NXP Semiconductors
BC807_BC807W_BC327_6
Product data sheet
Fig 1.
Fig 3.
h
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
FE
300
200
100
−10
0
V
Selection -16: DC current gain as a function of
collector current; typical values
V
Selection -40: DC current gain as a function of collector current; typical values
−1
CE
amb
amb
amb
CE
amb
amb
amb
= −1 V
= −1 V
= 150 °C
= 25 °C
= −55 °C
= 150 °C
= 25 °C
= −55 °C
−1
(1)
(2)
(3)
−10
h
FE
800
600
400
200
−10
−10
0
2
−1
I
006aaa119
C
(mA)
Rev. 06 — 17 November 2009
−10
−1
3
(1)
(2)
(3)
−10
Fig 2.
BC807; BC807W; BC327
h
(1) T
(2) T
(3) T
FE
45 V, 500 mA PNP general-purpose transistors
600
400
200
−10
−10
0
V
Selection -25: DC current gain as a function of
collector current; typical values
2
−1
amb
amb
amb
CE
I
006aaa121
C
(mA)
= −1 V
= 150 °C
= 25 °C
= −55 °C
−10
−1
3
(1)
(2)
(3)
−10
−10
© NXP B.V. 2009. All rights reserved.
2
I
006aaa120
C
(mA)
−10
3
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