BC337-25 T/R NXP Semiconductors, BC337-25 T/R Datasheet - Page 17

• Manufacturer Part Number: BC337-25 T/R
• Description: Transistors Bipolar - BJT TRANS GP TAPE RADIAL
• Manufacturer: NXP Semiconductors

Specifications of BC337-25 T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.5 A
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 160 at 100 mA at 1 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-54
• Dc Current Gain Hfe Max: 160 at 100 mA at 1 V
• Maximum Power Dissipation: 625 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 2000
• Part # Aliases: BC337-25,116

NXP Semiconductors
10. Revision history
Table 10.
BC817_BC817W_BC337_6
Product data sheet
Document ID
BC817_BC817W_
BC337_6
Modifications:
BC817_BC817W_
BC337_5
BC817_4
BC817W_SER_4
BC337_3
Revision history
Release date
20091117
20050121
20040105
20040225
19990415
•
•
•
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
Table 3
Figure 13 “Package outline SOT23
Figure 14 “Package outline SOT323
“Pinning”: updated
Rev. 06 — 17 November 2009
Data sheet status
Product data sheet
Product data sheet
Product specification
Product specification
Product specification
BC817; BC817W; BC337
(TO-236AB)”: updated
45 V, 500 mA NPN general-purpose transistors
(SC-70)”: updated
Change notice
-
CPCN200302007F1 BC817_4;
-
-
-
Supersedes
BC817_BC817W_
BC337_5
BC817W_SER_4;
BC337_3
BC817_3
BC817W_SER_3
BC337_338_CNV_2
© NXP B.V. 2009. All rights reserved.
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