TIP30AG ON Semiconductor, TIP30AG Datasheet - Page 5

• Manufacturer Part Number: TIP30AG
• Description: Transistors Bipolar - BJT 1A 60V 30W PNP
• Manufacturer: ON Semiconductor

Specifications of TIP30AG

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 60 V
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 60 V
• Maximum Dc Collector Current: 1 A
• Gain Bandwidth Product Ft: 3 MHz (Min)
• Dc Collector/base Gain Hfe Min: 40
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220-3
• Continuous Collector Current: 1 A
• Maximum Power Dissipation: 2 W
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 50

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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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PACKAGE DIMENSIONS
USA/Canada
Phone: [phone]
Phone: 81−3−5817−1050
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http://onsemi.com
CASE 221A−09
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ISSUE AG
−T−
TO−220
5
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
Y14.5M, 1982.
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
STYLE 1:
A
B
C
D
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Z
PIN 1. BASE
0.570
0.380
0.160
0.025
0.142
0.095
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
0.110
MIN
2. COLLECTOR
3. EMITTER
4. COLLECTOR
---
INCHES
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
0.620
0.405
0.190
0.036
0.161
0.105
0.161
0.025
0.562
0.060
0.210
0.120
0.055
0.255
0.050
0.080
0.110
MAX
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14.48
12.70
MILLIMETERS
MIN
9.66
4.07
0.64
3.61
2.42
2.80
0.36
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
---
15.75
10.28
14.27
MAX
4.82
0.91
4.09
2.66
4.10
0.64
1.52
5.33
3.04
2.79
1.39
6.47
1.27
2.04
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TIP29B/D