BC817-40E6327 Infineon Technologies, BC817-40E6327 Datasheet - Page 4

• Manufacturer Part Number: BC817-40E6327
• Description: Transistors Bipolar - BJT NPN 45 V 500 mA
• Manufacturer: Infineon Technologies

Specifications of BC817-40E6327

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 1 A
• Gain Bandwidth Product Ft: 170 MHz
• Dc Collector/base Gain Hfe Min: 250
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Continuous Collector Current: 500 mA
• Maximum Power Dissipation: 330 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000

Electrical Characteristics at T
Parameter
AC Characteristics
Transition frequency
I
Collector-base capacitance
V
Emitter-base capacitance
V
C
CB
EB
= 50 mA, V
= 0.5 V, f = 1 MHz
= 10 V, f = 1 MHz
CE
= 5 V, f = 100 MHz
A
= 25°C, unless otherwise specified
4
Symbol
f
C
C
T
cb
eb
min.
-
-
-
BC817K.../BC818K...
Values
typ.
170
40
3
max.
2011-09-19
-
-
-
Unit
MHz
pF