BC807-16 /T3 NXP Semiconductors, BC807-16 /T3 Datasheet - Page 17

• Manufacturer Part Number: BC807-16 /T3
• Description: Transistors Bipolar - BJT TRANS GP TAPE-13
• Manufacturer: NXP Semiconductors

Specifications of BC807-16 /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.5 A
• Gain Bandwidth Product Ft: 80 MHz
• Dc Collector/base Gain Hfe Min: 100 at 100 mA at 1 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 10000
• Part # Aliases: BC807-16,235

NXP Semiconductors
10. Revision history
Table 10.
BC807_BC807W_BC327_6
Product data sheet
Document ID
BC807_BC807W_
BC327_6
Modifications:
BC807_BC807W_
BC327_5
BC807_4
BC807W_3
BC327_3
Revision history
Release date
20091117
20050221
20040116
19990518
19990415
•
•
•
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
Table 3
Figure 13 “Package outline SOT23
Figure 14 “Package outline SOT323
“Pinning”: updated
Rev. 06 — 17 November 2009
Data sheet status
Product data sheet
Product data sheet
Product specification
Product specification
Product specification
BC807; BC807W; BC327
(TO-236AB)”: updated
45 V, 500 mA PNP general-purpose transistors
(SC-70)”: updated
Change notice
-
CPCN200302007F
CPCN200405006F
-
-
-
Supersedes
BC807_BC807W_
BC327_5
BC807_4; BC807W_3;
BC327_3
BC807_3
BC807W_808W_CNV_2
BC327_2
© NXP B.V. 2009. All rights reserved.
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