IS42S32400B-7TLI ISSI, Integrated Silicon Solution Inc, IS42S32400B-7TLI Datasheet - Page 48
![no-image](/images/manufacturer_photos/0/3/347/issi__integrated_silicon_solution_inc_sml.jpg)
IS42S32400B-7TLI
Manufacturer Part Number
IS42S32400B-7TLI
Description
IC SDRAM 128MBIT 143MHZ 86TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet
1.IS42S32400B-7T-TR.pdf
(60 pages)
Specifications of IS42S32400B-7TLI
Format - Memory
RAM
Memory Type
SDRAM
Memory Size
128M (4Mx32)
Speed
143MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
86-TSOPII
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IS42S32400B-7TLI
Manufacturer:
ISSI
Quantity:
2 890
Company:
Part Number:
IS42S32400B-7TLI
Manufacturer:
ISSI
Quantity:
1 080
Company:
Part Number:
IS42S32400B-7TLI
Manufacturer:
MICRON
Quantity:
807
Part Number:
IS42S32400B-7TLI
Manufacturer:
ISSI
Quantity:
20 000
IS42S32400B
BURST READ/SINGLE WRITE
The burst read/single write mode is entered by programming
the write burst mode bit (M9) in the mode register to a logic 1.
In this mode, all WRITE commands result in the access of a
single column location (burst of one), regardless of the
programmed burst length. READ commands access
columns according to the programmed burst length and
sequence, just as in the normal mode of operation (M9 = 0).
CONCURRENT AUTO PRECHARGE
An access command (READ or WRITE) to another bank
while an access command with auto precharge enabled is
executing is not allowed by SDRAMs, unless the SDRAM
supports CONCURRENT AUTO PRECHARGE. ISSI
SDRAMs support CONCURRENT AUTO PRECHARGE.
READ With Auto Precharge interrupted by a READ
READ With Auto Precharge interrupted by a WRITE
48
Internal States
Internal States
COMMAND
COMMAND
ADDRESS
ADDRESS
BANK m
BANK m
BANK n
BANK n
DQM
CLK
CLK
DQ
DQ
READ - AP
BANK n,
Page Active
T0
T0
BANK n
COL a
NOP
Page Active
CAS Latency - 3 (BANK n)
BANK n,
READ - AP
COL a
BANK n
T1
T1
NOP
Page Active
Page Active
READ with Burst of 4
READ with Burst of 4
CAS Latency - 3 (BANK n)
T2
T2
NOP
NOP
Integrated Silicon Solution, Inc. — www.issi.com —
BANK n,
READ - AP
COL b
BANK m
T3
T3
NOP
D
OUT
a
CAS Latency - 3 (BANK m)
Four cases where CONCURRENT AUTO PRECHARGE
occurs are defined below.
READ with Auto Precharge
1. Interrupted by a READ (with or without auto precharge):
2. Interrupted by a WRITE (with or without auto precharge):
Interrupt Burst, Precharge
A READ to bank m will interrupt a READ on bank n, CAS
latency later. The PRECHARGE to bank n will begin
when the READ to bank m is registered.
A WRITE to bank m will interrupt a READ on bank n when
registered. DQM should be used three clocks prior to the
WRITE command to prevent bus contention. The
PRECHARGE to bank n will begin when the WRITE to
bank m is registered.
WRITE - AP
BANK m,
BANK m
T4
T4
NOP
COL b
D
D
IN
t
OUT
RP - BANK n
READ with Burst of 4
b
a
Interrupt Burst, Precharge
WRITE with Burst of 4
T5
T5
D
NOP
NOP
D
IN
OUT
t
b+1
RP - BANK n
a+1
T6
T6
D
NOP
NOP
IN
D
PRELIMINARY INFORMATION Rev. 00J
OUT
b+2
b
DON'T CARE
DON'T CARE
Idle
T7
T7
D
NOP
NOP
D
Write-Back
IN
Precharge
OUT
b+3
t
t
RP - BANK m
DPL - BANK m
b+1
Idle
1-800-379-4774
03/03/09