BULD1101ET4 STMicroelectronics, BULD1101ET4 Datasheet - Page 6

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BULD1101ET4

Manufacturer Part Number
BULD1101ET4
Description
Transistors Bipolar - BJT Hi Vltg Fast Swtchng NPN Pwr Transistor
Manufacturer
STMicroelectronics
Datasheet

Specifications of BULD1101ET4

Product Category
Transistors Bipolar - BJT
Rohs
yes
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
450 V
Emitter- Base Voltage Vebo
12 V
Maximum Dc Collector Current
3 A
Dc Collector/base Gain Hfe Min
20
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
DPAK
Maximum Power Dissipation
35000 mW
Factory Pack Quantity
2500

Available stocks

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Quantity
Price
Part Number:
BULD1101ET4
Manufacturer:
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Electrical characteristics
6/11
2.2
Figure 10. Resistive load switching test circuit
Figure 11. Energy rating test circuit
Test circuit
BULD1101E

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