MT48V8M16LFB4-8:G Micron Technology Inc, MT48V8M16LFB4-8:G Datasheet - Page 7
![IC SDRAM 128MBIT 125MHZ 54VFBGA](/photos/7/22/72286/557-54-fbga_sml.jpg)
MT48V8M16LFB4-8:G
Manufacturer Part Number
MT48V8M16LFB4-8:G
Description
IC SDRAM 128MBIT 125MHZ 54VFBGA
Manufacturer
Micron Technology Inc
Type
Mobile SDRAMr
Specifications of MT48V8M16LFB4-8:G
Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
128M (8Mx16)
Speed
125MHz
Interface
Parallel
Voltage - Supply
2.3 V ~ 2.7 V
Operating Temperature
0°C ~ 70°C
Package / Case
54-VFBGA
Organization
8Mx16
Density
128Mb
Address Bus
14b
Access Time (max)
19/8/7ns
Maximum Clock Rate
125MHz
Operating Supply Voltage (typ)
2.5V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Supply Current
100mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT48V8M16LFB4-8:G
Manufacturer:
MICRON
Quantity:
4 000
Company:
Part Number:
MT48V8M16LFB4-8:G
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Company:
Part Number:
MT48V8M16LFB4-8:G TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Automotive Temperature
PDF: 09005aef807f4885/Source: 09005aef8071a76b
128Mbx16x32Mobile_2.fm - Rev. M 1/09 EN
The 128Mb SDRAM device uses an internal pipelined architecture to achieve high-speed
operation. This architecture is compatible with the 2n rule of prefetch architectures, but
it also enables the column address to be changed on every clock cycle to achieve a high-
speed, fully random access. Precharging one bank while accessing one of the other three
banks will hide the precharge cycles and provide seamless high-speed, random-access
operation.
The 128Mb SDRAM device is designed to operate in 3.3V or 2.5V low-power memory
systems. The 2.5V version is compatible with 1.8V I/O interface. An auto refresh mode is
provided along with a power-saving, power-down mode. All inputs and outputs are
LVTTL-compatible.
SDRAMs offer substantial advances in DRAM operating performance, including the
ability to synchronously burst data at a high data rate with automatic column-address
generation, the ability to interleave between internal banks to hide precharge time, and
the capability to randomly change column addresses on each clock cycle during a burst
access.
The automotive temperature (AT) option adheres to the following specifications:
• 16ms refresh rate
• Self refresh not supported
• Ambient and case temperature cannot be less than –40°C or greater than +105°C
7
Micron Technology, Inc., reserves the right to change products or specifications without notice.
128Mb: x16, x32 Mobile SDRAM
General Description
©2001 Micron Technology, Inc. All rights reserved.