BC548C_D11Z Fairchild Semiconductor, BC548C_D11Z Datasheet - Page 2

• Manufacturer Part Number: BC548C_D11Z
• Description: Transistors Bipolar - BJT NPN 30V 100mA HFE/800
• Manufacturer: Fairchild Semiconductor

Specifications of BC548C_D11Z

• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 30 V
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.1 A
• Gain Bandwidth Product Ft: 300 MHz
• Dc Collector/base Gain Hfe Min: 420 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92
• Maximum Power Dissipation: 500 mW
• Minimum Operating Temperature: - 65 C

©2002 Fairchild Semiconductor Corporation
Typical Characteristics
1000
100
100
100
10
80
60
40
20
0.1
1
10
0
1
1
0
1
Figure 1. Static Characteristic
Figure 5. Output Capacitance
V
2
CE
Figure 3. DC current Gain
= 5V
V
V
CB
4
CE
I
C
[V], COLLECTOR-BASE VOLTAGE
[V], COLLECTOR-EMITTER VOLTAGE
[mA], COLLECTOR CURRENT
6
10
10
8
I
I
B
B
= 400 A
= 350 A
10
I
B
= 300 A
12
100
100
14
I
I
B
B
f=1MHz
I
= 250 A
= 200 A
E
I
= 0
I
B
I
16
B
B
= 150 A
= 100 A
= 50 A
18
1000
1000
20
1000
Figure 6. Current Gain Bandwidth Product
Figure 4. Base-Emitter Saturation Voltage
10000
100
1000
10
100
0.1
100
1
10
0.1
10
1
Collector-Emitter Saturation Voltage
0.0
1
Figure 2. Transfer Characteristic
V
I
C
V
CE
= 10 I
CE
= 5V
0.2
= 5V
I
C
B
[mA], COLLECTOR CURRENT
V
V
I
BE
C
CE
[A], COLLECTOR CURRENT
V
[V], BASE-EMITTER VOLTAGE
(sat)
BE
1
0.4
(sat)
10
0.6
10
0.8
100
1.0
Rev. A2, August 2002
100
1.2
1000