KSC2328AYSHBU Fairchild Semiconductor, KSC2328AYSHBU Datasheet
KSC2328AYSHBU
Manufacturer Part Number
KSC2328AYSHBU
Description
Transistors Bipolar - BJT NPN Si Transistor Epitaxial
Manufacturer
Fairchild Semiconductor
Datasheet
1.KSC2328AYSHBU.pdf
(4 pages)
Specifications of KSC2328AYSHBU
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
30 V
Collector- Emitter Voltage Vceo Max
30 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
2 A
Gain Bandwidth Product Ft
120 MHz
Dc Collector/base Gain Hfe Min
160 at 500 mA at 2 V
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-92L
Maximum Power Dissipation
1000 mW
Minimum Operating Temperature
- 55 C
©2002 Fairchild Semiconductor Corporation
Audio Power Amplifier Applications
• Complement to KSA928A
• Collector Power Dissipation : P
• 3 Watt Output Application
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
h
V
V
V
I
P
T
T
BV
BV
BV
I
I
h
V
V
f
C
C
CBO
EBO
T
FE
Symbol
FE
J
STG
CBO
CEO
EBO
C
BE
CE
ob
CBO
CEO
EBO
Symbol
(on)
(sat)
Classification
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Base-Emitter On Voltage
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Collector Output Capacitance
Classification
h
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
FE
Parameter
C
=1W
T
a
=25 C unless otherwise noted
T
Parameter
a
=25 C unless otherwise noted
KSC2328A
I
I
I
V
V
V
V
I
V
V
C
C
E
C
CB
EB
CE
CE
CE
CB
=100 A, I
=10mA, I
=1mA, I
=1.5A, I
100 ~ 200
=5V, I
=30V, I
=2V, I
=2V, I
=2V, I
=10V,I
Test Condition
O
C
C
C
C
B
C
E
=0
=0
=0.03A
B
E
=500mA
=500mA
=500mA
E
=0, f=1MHz
=0
=0
=0
1. Emitter 2. Collector 3. Base
1
Min.
100
30
30
5
-55 ~ 150
Ratings
150
30
30
5
2
1
Typ.
120
30
160 ~ 320
Y
TO-92L
Max.
100
100
320
1.0
2.0
Rev. A2, September 2002
Units
W
V
V
V
A
C
C
Units
MHz
nA
nA
pF
V
V
V
V
V
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KSC2328AYSHBU Summary of contents
Page 1
... Base-Emitter On Voltage BE V (sat) Collector-Emitter Saturation Voltage CE f Current Gain Bandwidth Product T C Collector Output Capacitance ob h Classification FE Classification h FE ©2002 Fairchild Semiconductor Corporation KSC2328A T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition I =100 =10mA ...
Page 2
... I [mA], COLLECTOR CURRENT C Figure 3. Collector-Emitter Saturation Voltage 10 I (MAX) PULSE C I (MAX 0.1 0.01 0 [V], COLLECTOR-EMITTER VOLTAGE CE Figure 5. Safe Operating Area ©2002 Fairchild Semiconductor Corporation I = 7mA 6mA 5mA 1000 4mA 3mA B 100 I = 2mA 1mA B 10 ...
Page 3
... Package Dimensions 0.50 0.10 ©2002 Fairchild Semiconductor Corporation TO-92L 4.90 0.20 0.70MAX. 0.80 0.10 1.00MAX. 1.27TYP [1.27 ] 0.20 2.54 TYP 3.90 0.20 0.45 0.10 Dimensions in Millimeters Rev. A2, September 2002 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ ...