MT46H8M16LFBF-5:K TR Micron Technology Inc, MT46H8M16LFBF-5:K TR Datasheet - Page 26

• Manufacturer Part Number: MT46H8M16LFBF-5:K TR
• Description: IC DDR SDRAM 128MBIT 60VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT46H8M16LFBF-5:K TR

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 60-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 10: Electrical Characteristics and Recommended AC Operating Conditions (Continued)
Notes 1–9 apply to all the parameters in this table; V
PDF: 09005aef8331b3e9
128mb_mobile_ddr_sdram_t35m.pdf - Rev. F 03/10 EN
Parameter
PRECHARGE command pe-
riod
DQS read preamble CL = 3
DQS read postamble
Active bank a to active
bank b command
Read of SRR to next valid
command
SRR to read
DQS write preamble
DQS write preamble setup
time
DQS write postamble
Write recovery time
Internal WRITE-to-READ
command delay
Exit power-down mode to
first valid command
Exit self refresh to first
valid command
CL = 2
Notes:
Symbol
t
t
WPRES
t
t
t
t
WPRE
t
1. All voltages referenced to V
2. All parameters assume proper device initialization.
3. Tests for AC timing and electrical AC and DC characteristics may be conducted at nomi-
4. The circuit shown below represents the timing reference load used in defining the rele-
WPST
t
RPRE
RPRE
t
t
t
RPST
t
WTR
RRD
t
t
SRC
SRR
XSR
WR
RP
XP
nal supply voltage levels, but the related specifications and device operation are guaran-
teed for the full voltage ranges specified.
vant timing parameters of the device. It is not intended to be either a precise representa-
tion of the typical system environment or a depiction of the actual load presented by a
production tester. System designers will use IBIS or other simulation tools to correlate
the timing reference load to system environment. Specifications are correlated to produc-
tion test conditions (generally a coaxial transmission line terminated at the tester elec-
tronics). For the half-strength driver with a nominal 10pF load, parameters
are expected to be in the same range. However, these parameters are not subject to
production test but are estimated by design/characterization. Use of IBIS or other simula-
tion tools for system design validation is suggested.
I/O
Full drive strength
CL + 1
Min
0.25
0.9
0.5
0.4
0.4
15
10
15
80
2
0
2
1
50
-5
Electrical Specifications – AC Operating Conditions
Max
1.1
1.1
0.6
0.6
–
–
–
–
–
–
–
–
–
–
DD
/V
20pF
DDQ
CL + 1
Min
16.2
10.8
0.25
0.9
0.5
0.4
0.4
15
80
2
0
2
1
26
= 1.70–1.95V
SS
-54
.
I/O
128Mb: x16, x32 Mobile LPDDR SDRAM
Max
1.1
1.1
0.6
0.6
Half drive strength
–
–
–
–
–
–
–
–
–
–
Micron Technology, Inc. reserves the right to change products or specifications without notice.
CL + 1
50
Min
0.25
0.9
0.5
0.4
0.4
18
12
15
80
2
0
2
1
-6
Max
1.1
1.1
0.6
0.6
–
–
–
–
–
–
–
–
–
–
10pF
CL + 1
Min
22.5
0.25
0.9
0.5
0.4
0.4
15
15
80
2
0
1
1
© 2007 Micron Technology, Inc. All rights reserved.
-75
Max
1.1
1.1
0.6
0.6
–
–
–
–
–
–
–
–
–
–
Unit
t
t
t
t
t
t
t
t
t
ns
ns
ns
ns
ns
CK
CK
CK
CK
CK
CK
CK
CK
CK
t
AC and
Notes
23, 24
25
26
27
t
QH