PN3563_Q Fairchild Semiconductor
PN3563_Q
Manufacturer Part Number
PN3563_Q
Description
Transistors Bipolar - BJT NPN RF Transistor
Manufacturer
Fairchild Semiconductor
Specifications of PN3563_Q
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
30 V
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2 V
Maximum Dc Collector Current
0.05 A
Gain Bandwidth Product Ft
1.5 GHz
Dc Collector/base Gain Hfe Min
20 at 8 mA at 10 V
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-92
Maximum Power Dissipation
350 mW
Minimum Operating Temperature
- 55 C
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