BC847BPDXV6T5 ON Semiconductor, BC847BPDXV6T5 Datasheet - Page 4

• Manufacturer Part Number: BC847BPDXV6T5
• Description: Transistors Bipolar - BJT 100mA 50V Dual
• Manufacturer: ON Semiconductor

Specifications of BC847BPDXV6T5

• Product Category: Transistors Bipolar - BJT
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Collector- Base Voltage Vcbo: - 50 V, + 50 V
• Collector- Emitter Voltage Vceo Max: - 45 V, + 45 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: +/- 45 V
• Maximum Dc Collector Current: 0.1 A
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 150 at 10 uA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-563-6
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 357 mW
• Minimum Operating Temperature: - 55 C

7.0
5.0
3.0
2.0
1.0
1.5
1.0
0.8
0.6
0.4
0.3
2.0
1.6
1.2
0.8
0.4
2.0
0.2
10
0
0.4 0.6
0.02
0.2
Figure 1. Normalized DC Current Gain
0.5
Figure 3. Collector Saturation Region
10 mA
0.8
I
C
=
1.0
1.0
20 mA
I
V
C
I
Figure 5. Capacitances
C
R
, COLLECTOR CURRENT (mAdc)
0.1
=
, REVERSE VOLTAGE (VOLTS)
I
2.0
2.0
B
, BASE CURRENT (mA)
I
C
C
= 50 mA
ib
5.0
4.0
C
10
ob
6.0
BC847BPDXV6T1, BC847BPDXV6T5
1.0
T
8.0
A
20
I
C
= 25°C
TYPICAL NPN CHARACTERISTICS
10
= 100 mA
I
C
= 200 mA
V
T
T
A
50
CE
A
= 25°C
= 25°C
20
= 10 V
100
http://onsemi.com
10
200
40
20
4
400
300
200
100
0.4
0.3
0.2
0.1
2.4
2.8
1.0
0.9
0.8
0.7
0.6
0.5
1.0
1.2
1.6
2.0
80
60
40
30
20
0
0.1
0.2
0.5
Figure 4. Base−Emitter Temperature Coefficient
T
Figure 6. Current−Gain − Bandwidth Product
A
0.7 1.0
−55°C to +125°C
Figure 2. “Saturation” and “On” Voltages
= 25°C
0.2
0.3
0.5
V
I
I
C
C
BE(sat)
I
0.7
, COLLECTOR CURRENT (mAdc)
C
, COLLECTOR CURRENT (mAdc)
2.0
, COLLECTOR CURRENT (mA)
1.0
1.0
@ I
3.0
V
CE(sat)
C
2.0
/I
B
= 10
3.0
V
5.0
@ I
BE(on)
C
5.0
7.0
/I
B
@ V
= 10
7.0
10
10
CE
10
= 10 V
20
20
V
T
30
A
CE
= 25°C
= 10 V
30
50
70
100
100
50