IS61NLP25618A-200TQI-TR ISSI, Integrated Silicon Solution Inc, IS61NLP25618A-200TQI-TR Datasheet - Page 15
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IS61NLP25618A-200TQI-TR
Manufacturer Part Number
IS61NLP25618A-200TQI-TR
Description
IC SRAM 4MBIT 200MHZ 100TQFP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet
1.IS61NLP12836B-200TQLI.pdf
(29 pages)
Specifications of IS61NLP25618A-200TQI-TR
Format - Memory
RAM
Memory Type
SRAM - Synchronous
Memory Size
4M (256K x 18)
Speed
200MHz
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.465 V
Operating Temperature
-40°C ~ 85°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IS61NLP25618A-200TQI-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
IS61NLP12832B
IS61NLP12836B/IS61NVP12836B
IS61NLP25618A/IS61NVP25618A
CAPACITANCE
3.3V I/O AC TEST CONDITIONS
3.3V I/O OUTPUT LOAD EQUIVALENT
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
09/10/07
Symbol
c
c
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level
Output Load
In
ouT
OUTPUT
Parameter
Input Capacitance
Input/Output Capacitance
(1,2)
A
= 25°c, f = 1 MHz, V
Zo= 50Ω
Figure 1
See Figures 1 and 2
0V to 3.0V
dd
1.5 ns
1.5V
1.5V
Unit
= 3.3V.
50Ω
Conditions
V
V
ouT
In
= 0V
= 0V
OUTPUT
Max.
+3.3V
6
8
351 Ω
Figure 2
Unit
pF
pF
317 Ω
5 pF
Including
jig and
scope
15